Güllü, Hasan Hüseyin

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Profile URL
https://hdl.handle.net/20.500.14411/8052
Name Variants
Gullu,H.H.
H.,Güllü
H.H.Güllü
G., Hasan Huseyin
Güllü, Hasan Hüseyin
H., Gullu
G.,Hasan Huseyin
H.H.Gullu
Hasan Hüseyin, Güllü
G.,Hasan Hüseyin
Hasan Huseyin, Gullu
Gullu, Hasan Huseyin
Güllü,H.H.
Gullu, H. H.
Gullu, Hasan H.
Job Title
Doktor Öğretim Üyesi
Email Address
hasan.gullu@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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NO POVERTY1
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ZERO HUNGER2
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GOOD HEALTH AND WELL-BEING3
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QUALITY EDUCATION4
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GENDER EQUALITY5
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CLEAN WATER AND SANITATION6
CLEAN WATER AND SANITATION
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AFFORDABLE AND CLEAN ENERGY7
AFFORDABLE AND CLEAN ENERGY
5
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DECENT WORK AND ECONOMIC GROWTH8
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INDUSTRY, INNOVATION AND INFRASTRUCTURE9
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Scholarly Output

55

Articles

52

Views / Downloads

33/7

Supervised MSc Theses

1

Supervised PhD Theses

0

WoS Citation Count

890

Scopus Citation Count

915

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0

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0

WoS Citations per Publication

16.18

Scopus Citations per Publication

16.64

Open Access Source

8

Supervised Theses

1

JournalCount
Journal of Materials Science: Materials in Electronics16
Physica B: Condensed Matter7
Bulletin of Materials Science3
Materials Science in Semiconductor Processing3
Optik3
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Author: Delice, S.Subject: SnS2

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    Article
    Citation - WoS: 10
    Citation - Scopus: 10
    Temperature Dependent Band Gap in Sns2x< (x=0.5) Thin Films
    (Elsevier Sci Ltd, 2020) Delice, S.; Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Gasanly, N. M.; Parlak, M.
    Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy and scanning electron microscopy methods were used for structural characterization while temperature-dependent transmission measurements carried out at various temperatures in between 10 and 300 K were accomplished for optical investigations. X-ray diffraction pattern of studied composition presented peaks at positions which are between those of SnSe2 and SnS2. Transmittance spectra recorded at all applied temperatures were analyzed using well-known Tauc relation. Analyses revealed the direct band gap energy value of SnSSe thin films as 1.75 eV at room temperature. Change of band gap energy as a response to varying temperature were discussed in the study by utilizing Varshni relation. It was shown that variation of gap energy values was well-matched with the Varshni's empirical formula. Energy band gap at absolute zero and rate of change of band gap with temperature were found to be 1.783 eV and -2.1 x 10(-4) eV K-1, respectively.