Park, Jongee

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Profile URL
https://hdl.handle.net/20.500.14411/6649
Name Variants
Jongee Park
P.,Jongee
P., Jongee
J.,Park
Park J.
Park, Jongee
Park,J.
J., Park
Park,Jongee
Jongee, Park
Park, J
Job Title
Profesör Doktor
Email Address
jongee.park@atilim.edu.tr
Main Affiliation
Metallurgical and Materials Engineering
Status
Website
ORCID ID
0000-0003-1415-6906
Scopus Author ID
58155971100
Turkish CoHE Profile ID
Google Scholar ID
1CMS4nkAAAAJ
WoS Researcher ID
N-9579-2015

Sustainable Development Goals

NO POVERTY1
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0
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ZERO HUNGER2
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0
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GOOD HEALTH AND WELL-BEING3
GOOD HEALTH AND WELL-BEING
2
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QUALITY EDUCATION4
QUALITY EDUCATION
0
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GENDER EQUALITY5
GENDER EQUALITY
0
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CLEAN WATER AND SANITATION6
CLEAN WATER AND SANITATION
0
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AFFORDABLE AND CLEAN ENERGY7
AFFORDABLE AND CLEAN ENERGY
12
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DECENT WORK AND ECONOMIC GROWTH8
DECENT WORK AND ECONOMIC GROWTH
0
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INDUSTRY, INNOVATION AND INFRASTRUCTURE9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
0
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REDUCED INEQUALITIES10
REDUCED INEQUALITIES
0
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SUSTAINABLE CITIES AND COMMUNITIES11
SUSTAINABLE CITIES AND COMMUNITIES
1
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RESPONSIBLE CONSUMPTION AND PRODUCTION12
RESPONSIBLE CONSUMPTION AND PRODUCTION
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LIFE BELOW WATER14
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LIFE ON LAND15
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Documents

53

Citations

929

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19

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Documents

50

Citations

893

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Scholarly Output

57

Articles

45

Views / Downloads

21/0

Supervised MSc Theses

3

Supervised PhD Theses

0

WoS Citation Count

820

Scopus Citation Count

855

Patents

0

Projects

1

WoS Citations per Publication

14.39

Scopus Citations per Publication

15.00

Open Access Source

7

Supervised Theses

3

JournalCount
Ceramics International10
Journal of Nanoscience and Nanotechnology3
Journal of Ceramic Processing Research3
3rd International Conference on NANOCON -- SEP 21-23, 2011 -- Brno, CZECH REPUBLIC2
Advanced Materials Research -- 2012 International Conference on Advances in Materials Science and Engineering, AMSE 2012 -- 9 December 2012 through 10 December 2012 -- Seoul -- 954882
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Subject: hole transport layer

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    Article
    Citation - WoS: 39
    Citation - Scopus: 37
    MoS2-nanosheet/graphene-oxide composite hole injection layer in organic light-emitting diodes
    (Korean inst Metals Materials, 2017) Park, Minjoon; Thang Phan Nguyen; Choi, Kyoung Soon; Park, Jongee; Ozturk, Abdullah; Kim, Soo Young; Nguyen, Thang Phan
    In this work, composite layers comprising two-dimensional MoS2 and graphene oxide (GO) were employed as hole injection layers (HILs) in organic light-emitting diodes (OLEDs). MoS2 was fabricated by the butyllithium (BuLi) intercalation method, while GO was synthesized by a modified Hummers method. The X-ray diffraction patterns showed that the intensity of the MoS2 (002) peak at 14.15A degrees decreased with increase in GO content; the GO (001) peak was observed at 10.07A degrees. In the C 1s synchrotron radiation photoemission spectra, the contributions of the C-O, C=O, and O-C=O components increased with increase in GO content. These results indicated that GO was well mixed with MoS2. The lateral size of MoS2 spanned from a few hundreds of nanometers to 1 mu m, while the size of GO was between 400 nm and a few micrometers. Thus, the coverage of the MoS2-GO composite on the ITO surface improved as the GO content increased, owing to the large particle size of GO. Notably, GO with large size could fully cover the indium tin oxide film surface, thus, lowering the roughness. The highest maximum power efficiency (PEmax) was exhibited by the OLED with MoS2-GO 6:4 composite HIL, indicating that similar contents of MoS2 and GO in MoS2-GO composites provide the best results. The OLED with GO HIL showed very high PEmax (4.94 lm W-1) because of very high surface coverage and high work function of GO. These results indicate that the MoS2-GO composites can be used to fabricate HILs in OLEDs.