Karadeniz, Seda

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Karadeniz, S.
S.,Karadeniz
S., Karadeniz
Karadeniz,S.
Seda, Karadeniz
Kartal S.
K., Seda
K.,Seda
Karadeniz, Seda
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Öğretim Görevlisi
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seda.karadeniz@atilim.edu.tr
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    Article
    Citation Count: 9
    A study on electrical properties of Au/4H-SiC Schottky diode under illumination
    (Springer, 2021) Karadeniz, Seda; Karadeniz, S.; Güllü, Hasan Hüseyin; Department of Basic English (Prep School); Department of Electrical & Electronics Engineering
    Y In this work, a metal-semiconductor diode in the form of Au/4H-SiC is fabricated, and the electrical properties of this device are systematically examined under dark and different illumination intensities. To perform this, the currentvoltage (I-V) characteristics of the Schottky-type diode are analyzed at room temperature. The performance parameters such as saturation current (I-0), barrier height (Phi(B)), ideality factor (n) and series resistance (R-s) are found to be illumination dependent. The reverse biased I - V characteristics under incident light indicate high photo-sensitivity as compared to the response at forward bias. Thus, this result is investigated in detail according to both Schottky and Poole-Frenkel effects. It is found that the Poole-Frenkel mechanism is dominant in the reverse biased region. The Au/4H-SiC Schottky junction has a strong photo-current response to the different illumination intensities and transient photocurrent characteristics of the fabricated device are studied at the illumination intensities of 50 and 100 mW/cm(2). All experimental results indicate that the Au/4H-SiC Schottky diode, with a valuable response to the illumination together with change in illumination intensity, can be used for optoelectronic applications.