Erhan, İnci

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Profile URL
https://hdl.handle.net/20.500.14411/8098
Name Variants
I.,Erhan
E.,İnci
İ.,Erhan
E.,Inci
İnci, Erhan
E., Inci
Erhan, Inci
Erhan,İ.
Inci, Erhan
Erhan,I.
I., Erhan
Erhan, İnci
Erhan, Inci M.
Erhan, I. M.
Erhan,I.M.
Ercan, I
Erhan, İnci M.
Job Title
Profesör Doktor
Email Address
inci.erhan@atilim.edu.tr
Main Affiliation
Mathematics
Status
Former Staff
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WoS Researcher ID

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Scholarly Output

65

Articles

58

Views / Downloads

251/1006

Supervised MSc Theses

5

Supervised PhD Theses

0

WoS Citation Count

1571

Scopus Citation Count

1435

Patents

0

Projects

0

WoS Citations per Publication

24.17

Scopus Citations per Publication

22.08

Open Access Source

27

Supervised Theses

5

JournalCount
Fixed Point Theory and Applications10
Filomat5
Abstract and Applied Analysis4
Crystal Research and Technology3
Journal of Inequalities and Applications3
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Author: Kayed, TSSubject: AgIn5S8

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    Article
    Citation - WoS: 26
    Citation - Scopus: 26
    Fabrication and Some Physical Properties of Agin5s8< Thin Films
    (Elsevier Science Sa, 2004) Qasrawi, AF; Kayed, TS; Ercan, I
    AgIn5S8 thin films are deposited on glass substrates, kept at 300 K, by thermal evaporation of AgIn5S8 single crystals under the pressure of 10-5 Torr. The X-ray fluorescence analysis revealed that the films have a weight percentage of similar to11.5% Ag, 61.17% In, and 27.33% S which corresponds to 1:5:8 stoichiometric composition. X-ray analysis of the films reveals the polycrystalline nature of the films. The lattice parameter (a) of the films was calculated to be 10.784(5) Angstrom. The dark n-type electrical conductivity of the films was measured in the temperature range of 30-350 K. The conductivity data analysis shows that the thermionic emission of the charge carriers having activation energies of 147 and 224 meV in the temperature ranges of 130-230 and 240-350 K, respectively, are the dominant transport mechanism in the films. The variable range hopping transport mechanism is dominant below 130 K. The room temperature photocurrent-photon energy dependency predicts a band gap of 1.91 eV of the films. The illumination intensity-photocurrent dependency measured in the intensity range of 13-235 W cm(-2) reveals monomolecular recombination (linear) in the films and bimolecular recombination (sublinear) at the film surface corresponding to low and high applied illumination intensities, respectively. The time-dependant photocurrent measured at fixed illumination intensity reveals a response time of 0.85, 2.66 and 10.0 s in the time periods of 0-0.5, 0.5-1.0, and 1.0-10.0 s, respectively. (C) 2004 Elsevier B.V. All rights reserved.