Erhan, İnci

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Profile URL
https://hdl.handle.net/20.500.14411/8098
Name Variants
I.,Erhan
E.,İnci
İ.,Erhan
E.,Inci
İnci, Erhan
E., Inci
Erhan, Inci
Erhan,İ.
Inci, Erhan
Erhan,I.
I., Erhan
Erhan, İnci
Erhan, Inci M.
Erhan, I. M.
Erhan,I.M.
Ercan, I
Erhan, İnci M.
Job Title
Profesör Doktor
Email Address
inci.erhan@atilim.edu.tr
Main Affiliation
Mathematics
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID

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Scholarly Output

65

Articles

58

Views / Downloads

236/982

Supervised MSc Theses

5

Supervised PhD Theses

0

WoS Citation Count

1515

Scopus Citation Count

1478

Patents

0

Projects

0

WoS Citations per Publication

23.31

Scopus Citations per Publication

22.74

Open Access Source

27

Supervised Theses

5

JournalCount
Fixed Point Theory and Applications10
Filomat5
Abstract and Applied Analysis4
Crystal Research and Technology3
Journal of Inequalities and Applications3
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Author: Cavdar, SEnd date: 2009

Scholarly Output Search Results

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    Article
    Citation - WoS: 11
    Citation - Scopus: 11
    Microstructural, thermal, and electrical properties of Bi1.7V0.3Sr2Ca2Ca3Ox glass-ceramic superconductor
    (Wiley-v C H verlag Gmbh, 2004) Kayed, TS; Calinli, N; Aksu, E; Koralay, H; Günen, A; Ercan, I; Cavdar, S
    A glass-ceramic Bi1.7V0.3Sr2Ca2Cu3Ox superconductor was prepared by the melt-quenching method. The compound was characterized by scanning electron microscopy, x-ray diffraction, differential thermal analysis, current-voltage characteristics, transport resistance measurements, and Hall effect measurements. Two main phases (BSCCO 2212 and 2223) were observed in the x-ray data and the values of the lattice parameters quite agree with the known values for 2212 and 2223 phases. The glass transition temperature was found to be 426 degreesC while the activation energy for crystallization of glass has been found to be E-a = 370.5 kJ / mol. This result indicates that the substitution of vanadium increased the activation energy for the BSCCO system. An offset T-c of 80 K was measured and the onset T-c was 100 K. The Hall resistivity rho(H) was found to be almost field-independent at the normal state. A negative Hall coefficient was observed and no sign reversal of rho(H) or RH could be noticed. The mobility and carrier density at different temperatures in the range 140-300 K under different applied magnetic fields up to 1.4 T were also measured and the results are discussed.