Sürücü, Özge

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https://hdl.handle.net/20.500.14411/7179
Name Variants
Bayrakll Ö.
O., Surucu
Bayrakli O.
Bayrakli, Ozge
O.,Surucu
Surucu, Ozge
Ö.,Sürücü
Ozge, Surucu
Sürücü, Özge
Ö., Sürücü
Bayraklı Sürücü Ö.
Özge, Sürücü
Sürücü,Ö.
Surucu, O. Bayrakli
Bayrakli Sürücü O.
Bayraklı Ö.
Surucu,O.
Bayrakli Surucu O.
Bayrakli Ö.
Sürücü Ö.
S.,Ozge
Bayrakli, O.
S., Özge
S., Ozge
S.,Özge
Bayrakli Surucu, Ozge
Surucu O.
Surucu, O.
Bayrakli Sürücü Ö.
Job Title
Doçent Doktor
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ozge.surucu@atilim.edu.tr
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Electrical-Electronics Engineering
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Website
ORCID ID
0000-0002-8478-1267
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Turkish CoHE Profile ID
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WoS Researcher ID
ABA-4839-2020

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Documents

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831

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Journal of Materials Science: Materials in Electronics7
Applied Physics A4
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End date: 2025Subject: Thin film

Scholarly Output Search Results

Now showing 1 - 6 of 6
  • Thumbnail Image
    Article
    Citation - WoS: 1
    Deposition and Characterization of ZnSnSe2 Thin-Films Deposited by Using Sintered Stoichiometric Powder
    (Gazi Univ, 2019) Bayrakli Surucu, Ozge; Gullu, Hasan Huseyin
    In this work, ZnSnSe2 (ZTSe) thin films were deposited using crystalline powder grown by vertical Bridgman-Stockbarger technique. The deposition process was carried out by means of e-beam evaporation on the well-cleaned soda lime glass substrates and keeping them at the substrate temperature of 200 degrees C. The structural, optical and electrical properties of ternary ZTSe thin films were investigated depending on the annealing temperature at 250 and 300 degrees C. X-ray diffraction analysis showed that as-grown films were in amorphous structure, however annealing at 250 degrees C triggered the crystallization on the preferred ternary structure and annealing at 300 degrees C resulted in the changes from amorphous to the polycrystalline structure. Using the compositional analysis, the detail information about the stoichiometry and the segregation mechanisms of the constituent elements in the structure were determined for both as-grown and annealed samples. In addition, they were morphologically characterized using scanning electron microscopy technique. The electrical properties were analyzed using temperature dependent dark- and photo-conductivity measurements. From the variation of electrical conductivity as a function of the ambient temperature, the current transport mechanisms and corresponding activation energies at specific temperature intervals for each sample were determined. The optical properties for the ZTSe thin films were studied depending on the structural changes with annealing.
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    Article
    Citation - WoS: 5
    Citation - Scopus: 5
    Physical Characterization of Thermally Evaporated Sn-Sb Thin Films for Solar Cell Applications
    (Springer Heidelberg, 2023) Bektas, Tunc; Surucu, Ozge; Terlemezoglu, Makbule; Parlak, Mehmet
    The substitution of Sb in binary SnSe structure may lead to tailoring the physical properties of both SnSe and SbSe, promising absorber layers for thin film solar cells. The resulting Sn-Sb-Se structure could be an outstanding material for photovoltaic applications. In this study, Sn-Sb-Se thin films were deposited by thermal evaporation, and the effect of annealing on the films' structural, optical, and electrical properties were reported. XRD measurement shows that annealing at 300 degrees C yields the best crystalline quality, and structural parameters were calculated using XRD data. SEM and AFM measurements indicate deformation in the film surface after annealing at 400 degrees C. UV-Vis spectroscopy measurement provides a high absorption coefficient which indicates a direct band gap. The band gap and activation energies of the as-grown sample were found as 1.59 eV and 106.1 meV, respectively. The results of SEM, AFM, XRD, Raman, UV-Vis spectroscopy and temperature-dependent photoconductivity measurements were discussed throughout the paper.
  • Thumbnail Image
    Article
    Citation - WoS: 20
    Citation - Scopus: 24
    Temperature Dependence of Band Gaps in Sputtered Snse Thin Films
    (Pergamon-elsevier Science Ltd, 2019) Delice, S.; Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, M.; Gasanly, N. M.
    Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400-1000 nm. Transmission spectra exhibited sharp decrease near the absorption edge around 900 nm. The transmittance spectra were analyzed using Tauc relation and first derivative spectroscopy techniques to get band gap energy of the SnSe thin films. Both of the applied methods resulted in existence of two band gaps with energies around 1.34 and 1.56 eV. The origin of these band gaps was investigated and it was assigned to the splitting of valence band into two bands due to spin-orbit interaction. Alteration of these band gap values due to varying sample temperature of the thin films were also explored in the study. It was seen that the gap energy values increased almost linearly with decreasing temperature as expected according to theoretical knowledge.
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    Conference Object
    Citation - WoS: 4
    Citation - Scopus: 3
    Temperature-dependent material characterization of CuZnSe2 thin films
    (Elsevier Science Sa, 2020) Gullu, H. H.; Surucu, O.; Terlemezoglu, M.; Isik, M.; Ercelebi, C.; Gasanly, N. M.; Parlak, M.
    In the present work, CuZnSe2 (CZSe) thin films were co-deposited by magnetron sputtering of ZnSe and Cu targets. The structural analyses resulted in the stoichiometric elemental composition and polycrystalline nature without secondary phase contribution in the film structure. Optical and electrical properties of CZSe thin films were investigated using temperature-dependent optical transmission and electrical conductivity measurements. The band gap energy values were obtained using transmittance spectra under the light of expression relating absorption coefficient to incident photon energy. Band gap energy values were found in decreasing behavior from 2.31 to 2.27 eV with increase in temperature from 10 to 300 K. Temperature-band gap dependency was evaluated by Varshni and O'Donnell models to detail the optical parameters of the thin films. The experimental dark and photoconductivity values were investigated by thermionic emission model over the grain boundary potential. Room temperature conductivity values were obtained in between 0.91 and 4.65 ( x 10(-4) Omega(-1)cm(-1)) under various illumination intensities. Three different linear conductivity regions were observed in the temperature dependent profile. These linear regions were analyzed to extract the activation energy values.
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    Article
    Citation - WoS: 25
    Citation - Scopus: 26
    Determination of Current Transport Characteristics in Au-cu/Cuo Schottky Diodes
    (Elsevier, 2019) Surucu, O. Bayrakli; Gullu, H. H.; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M.
    In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined under the assumption of TE with Gaussian distribution of barrier height. In this analysis, standard deviation and mean zero bias barrier height were evaluated as 0.176 and 1.48 eV, respectively. Depending on the change in the diode parameters with temperature, Richardson constant was recalculated as 110.20 Acm(-2)K(-2) with the help of modified Richardson plot. In addition, density of states at the interface were determined by using the forward bias I-V results.
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    Article
    Citation - WoS: 50
    Citation - Scopus: 46
    Temperature-Dependent Optical Characteristics of Sputtered Nio Thin Films
    (Springer Heidelberg, 2022) Terlemezoglu, M.; Surucu, O.; Isik, M.; Gasanly, N. M.; Parlak, M.
    In this work, nickel oxide thin films were deposited by radio frequency magnetron sputtering technique. X-ray diffraction (XRD), scanning electron microscopy and energy-dispersive X-ray analysis methods were applied to reveal the structural and morphological properties of sputtered thin films. The XRD pattern of films confirmed the presence of the cubic phase of nickel oxide with the preferential orientation of (200) direction. The surface morphology of thin films was observed as almost uniform and smooth. Optical aspects of sputtered film were studied by employing the room temperature Raman and temperature-dependent transmittance spectroscopy techniques in the range of 10-300 K. Tauc relation and derivative spectroscopy techniques were applied to obtain the band gap energy of the films. In addition, the relation between the band gap energy and the temperature was investigated in detail considering the Varshni optical model. The absolute zero band gap energy, rate of change of band gap energy, and Debye temperature were obtained as 3.57 eV, - 2.77 x 10(-4) eV/K and 393 K, respectively.