Sürücü, Özge

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Profile URL
https://hdl.handle.net/20.500.14411/7179
Name Variants
Bayrakll Ö.
O., Surucu
Bayrakli O.
Bayrakli, Ozge
O.,Surucu
Surucu, Ozge
Ö.,Sürücü
Ozge, Surucu
Sürücü, Özge
Ö., Sürücü
Bayraklı Sürücü Ö.
Özge, Sürücü
Sürücü,Ö.
Surucu, O. Bayrakli
Bayrakli Sürücü O.
Bayraklı Ö.
Surucu,O.
Bayrakli Surucu O.
Bayrakli Ö.
Sürücü Ö.
S.,Ozge
Bayrakli, O.
S., Özge
S., Ozge
S.,Özge
Bayrakli Surucu, Ozge
Surucu O.
Surucu, O.
Bayrakli Sürücü Ö.
Job Title
Doçent Doktor
Email Address
ozge.surucu@atilim.edu.tr
Main Affiliation
Electrical-Electronics Engineering
Status
Website
ORCID ID
0000-0002-8478-1267
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID
ABA-4839-2020

Sustainable Development Goals

9

INDUSTRY, INNOVATION AND INFRASTRUCTURE
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5

GENDER EQUALITY
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2

ZERO HUNGER
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4

QUALITY EDUCATION
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11

SUSTAINABLE CITIES AND COMMUNITIES
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17

PARTNERSHIPS FOR THE GOALS
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16

PEACE, JUSTICE AND STRONG INSTITUTIONS
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3

GOOD HEALTH AND WELL-BEING
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12

RESPONSIBLE CONSUMPTION AND PRODUCTION
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15

LIFE ON LAND
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8

DECENT WORK AND ECONOMIC GROWTH
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14

LIFE BELOW WATER
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10

REDUCED INEQUALITIES
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7

AFFORDABLE AND CLEAN ENERGY
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1

NO POVERTY
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6

CLEAN WATER AND SANITATION
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CLIMATE ACTION
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Documents

55

Citations

834

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Scholarly Output

44

Articles

41

Views / Downloads

14/0

Supervised MSc Theses

1

Supervised PhD Theses

0

WoS Citation Count

614

Scopus Citation Count

615

WoS h-index

15

Scopus h-index

15

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0

WoS Citations per Publication

13.95

Scopus Citations per Publication

13.98

Open Access Source

5

Supervised Theses

1

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Journal of Materials Science: Materials in Electronics7
Applied Physics A4
Materials Letters3
Materials Science in Semiconductor Processing3
Physica Scripta3
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Author: Surucu, G.

Scholarly Output Search Results

Now showing 1 - 5 of 5
  • Thumbnail Image
    Article
    Citation - WoS: 31
    Citation - Scopus: 33
    Equiatomic Quaternary Heusler Compounds Tivfez (z=al, Si, Ge): Half-Metallic Ferromagnetic Materials
    (Elsevier Science Sa, 2021) Gencer, A.; Surucu, O.; Usanmaz, D.; Khenata, R.; Candan, A.; Surucu, G.
    Equiatomic quaternary Heusler compounds (EQHCs) are very promising materials for spintronic applications due to their excellent electronic and magnetic properties. In this study, structural, electronic, magnetic, mechanic, and dynamic properties of TiVFeZ (Z=Al, Si, Ge) EQHCs are investigated. Three nonequivalent structural configurations of alpha, beta, and gamma type structures are considered. The gamma is defined as the most stable phase for all these compounds and has a half-metallic character. The predicted Curie temperatures of TiVFeAl, TiVFeSi, and TiVFeGe compounds are about 488 K, 256 K, and 306 K, respectively. We also show that TiVFeZ (Z=Al, Si, Ge) have thermodynamic, dynamic, and mechanical stabilities. The presented results reveal that these compounds are potential materials for spintronics applications. (C) 2021 Elsevier B.V. All rights reserved.
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    Article
    Citation - Scopus: 1
    Determining the Hydrogen Production Potential of Conmo6se8 Chevrel Phases
    (Institute of Physics, 2025) Gencer, A.; Surucu, O.; Sahin, M.; Ozel, F.; Surucu, G.
    In this study, the ConMo6Se8 (n = 1, 2, 3, and 4) Chevrel phases are investigated by using Density Functional Theory (DFT) to reveal their potential for photocatalytic hydrogen production. The stability conditions of these phases reveal that CoMo6Se8, Co2Mo6Se8, and Co3Mo6Se8 satisfy the thermodynamic and mechanic stability properties, while Co4Mo6Se8 does not satisfy any of these properties. Furthermore, the formation enthalpy of these phases shows that CoMo6Se8, Co2Mo6Se8, and Co3Mo6Se8 can be synthesized experimentally due to having negative formation enthalpy values. Furthermore, the thermal stabilities of the machine-learning (ML) force fields are investigated by ab-initio molecular dynamics (AIMD) calculations. The electronic properties of these phases are also investigated in detail, and it is found that Co3Mo6Se8 has a suitable band gap for photocatalytic water splitting. Concerning the investigation of the valence band and conduction band levels, it is shown that Co3Mo6Se8 has a conduction band minimum level suitable for producing hydrogen. This study is the first attempt to reveal the hydrogen production performance of the ConMo6Se8 (n = 1, 2, 3, and 4) Chevrel phases as far as the literature is concerned, paving the ground for future investigations in this field. © 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
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    Article
    Citation - WoS: 23
    Citation - Scopus: 23
    Exploring Temperature-Dependent Bandgap and Urbach Energies in Cdte Thin Films for Optoelectronic Applications
    (Elsevier, 2024) Surucu, O.; Surucu, G.; Gasanly, N. M.; Parlak, M.; Isik, M.
    This study examines CdTe thin films deposited via RF magnetron sputtering, focusing on structural and optical properties. X-ray diffraction, Raman spectroscopy, and SEM assessed structural characteristics. Optical properties were analyzed through transmittance measurements from 10 to 300 K. Tauc plots and Varshni modeling revealed a temperature-dependent bandgap, increasing from 1.49 eV at room temperature to 1.57 eV at 10 K. Urbach energy rose from 82.7 to 93.7 meV with temperature. These results are essential for applications where temperature affects CdTe-based device performance.
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    Article
    Citation - WoS: 10
    Citation - Scopus: 10
    Innovative 2d Materials for Efficient Photocatalysis: a Comparative Study for Wsi2n4, Wge2n4, and Their Janus Counterpart Wsigen4 Monolayers
    (Pergamon-elsevier Science Ltd, 2024) Himmet, F.; Surucu, G.; Lisesivdin, S. B.; Surucu, O.; Altuntas, G.; Bostan, B.; Gencer, A.
    In pursuit of environmentally friendly and effective photocatalytic materials for water splitting, this research paper presents a thorough evaluation of WSi2N4, WGe2N4, and their Janus counterpart WSiGeN4 monolayers through the application of Density Functional Theory. The study elucidates the optical, electronic, and structural characteristics of these monolayers, thereby demonstrating their potential as highly favorable contenders for applications involving photocatalytic water splitting. By means of comprehensive optimization and analysis, it is shown that these monolayers possess advantageous characteristics, such as favorable band gaps, stable work functions, and stability over a broad pH range. These attributes are of utmost importance in ensuring the effectiveness of hydrogen evolution reaction (HER). The inclusion of Janus WSiGeN4, which possesses an intrinsic mirror asymmetry, significantly improves the photocatalytic efficacy of the material. This is achieved by meeting the demands of optimal redox reaction levels in both the conduction and valence bands. In conjunction with machine learning force fields, ab initio molecular dynamics (AIMD) simulations validate the thermal stability of these monolayers at 300 K. In addition, our analysis of the optical properties reveals substantial absorption in the visible spectrum - vital for photocatalytic applications powered by solar energy. In summary, the research highlights the potential of Janus WSiGeN4, WGe2N4, and WSi2N4 monolayers as multifunctional and effective substances for forthcoming photocatalytic water -splitting systems. This advancement indicates of a significant stride in the direction of sustainable energy solution development.
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    Article
    Citation - WoS: 7
    Citation - Scopus: 5
    Pressure and Spin Effect on the Stability, Electronic and Mechanic Properties of Three Equiatomic Quaternary Heusler (fevhfz, Z = Al, Si, and Ge) Compounds
    (Elsevier, 2021) Surucu, G.; Gencer, A.; Surucu, O.; Usanmaz, D.; Candan, A.
    In this paper, three equiatomic quaternary Heusler compounds -FeVHfZ (Z = Al, Si, and Ge) - are investigated for their structural, magnetic, electronic, mechanic, and lattice dynamic properties under pressure effect. These compounds are optimized for under three structural types and three magnetic phases: beta is the most stable structure with ferromagnetic phase. The electronic properties reveal that FeVHfAl is a half-metal, and that FeVHfSi and FeVHfGe are spin gapless semiconductors. In addition to electronic band structure, possible hybridization and partial density of states are presented. Furthermore, the mechanical properties are studied, and the three-dimensional direction-dependent mechanical properties are visualized under varying pressure effects. Our results reveal the half-metal and spin gapless semiconductor nature of the ferromagnetic FeVHfZ com-pounds, making them promising materials for spintronics applications.