Sürücü, Özge

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https://hdl.handle.net/20.500.14411/7179
Name Variants
Bayrakll Ö.
O., Surucu
Bayrakli O.
Bayrakli, Ozge
O.,Surucu
Surucu, Ozge
Ö.,Sürücü
Ozge, Surucu
Sürücü, Özge
Ö., Sürücü
Bayraklı Sürücü Ö.
Özge, Sürücü
Sürücü,Ö.
Surucu, O. Bayrakli
Bayrakli Sürücü O.
Bayraklı Ö.
Surucu,O.
Bayrakli Surucu O.
Bayrakli Ö.
Sürücü Ö.
S.,Ozge
Bayrakli, O.
S., Özge
S., Ozge
S.,Özge
Bayrakli Surucu, Ozge
Surucu O.
Surucu, O.
Bayrakli Sürücü Ö.
Job Title
Doçent Doktor
Email Address
ozge.surucu@atilim.edu.tr
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Electrical-Electronics Engineering
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Website
ORCID ID
0000-0002-8478-1267
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Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID
ABA-4839-2020

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Documents

55

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826

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44

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41

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Journal of Materials Science: Materials in Electronics7
Applied Physics A4
Materials Letters3
Materials Science in Semiconductor Processing3
Physica Scripta3
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Author: Parlak, M.Subject: [No Keyword Available]

Scholarly Output Search Results

Now showing 1 - 7 of 7
  • Thumbnail Image
    Article
    Citation - WoS: 11
    Citation - Scopus: 12
    Structural and Temperature-Tuned Bandgap Characteristics of Thermally Evaporated β-in2< Thin Films
    (Springer, 2021) Surucu, O.; Isik, M.; Terlemezoglu, M.; Gasanly, N. M.; Parlak, M.
    In2S3 is one of the attractive compounds taking remarkable interest in optoelectronic device applications. The present study reports the structural and optical characteristics of thermally evaporated beta-In2S3 thin films. The crystalline structure of the thin films was found as cubic taking into account the observed diffraction peaks in the X-ray diffraction pattern. The atomic compositional ratio of constituent elements was obtained as consistent with chemical formula of In2S3. Three peaks around 275, 309 and 369 cm(-1) were observed in the Raman spectrum. Temperature-tuned bandgap energy characteristics of the In2S3 thin films were revealed from the investigation of transmittance spectra obtained at various temperatures between 10 and 300 K. The analyses of the transmittance spectra indicated that direct bandgap energy of the In2S3 thin films decreases from 2.40 eV (at 10 K) to 2.37 eV (at 300 K) with the increase of measurement temperature. The bandgap energy vs. temperature relation was investigated by means of Varshni optical model. The fitting of the experimental data under the light of theoretical expression revealed the absolute zero bandgap energy, the rate of change of bandgap energy and Debye temperature.
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    Article
    Citation - WoS: 17
    Citation - Scopus: 18
    Investigation of Band Gap Energy Versus Temperature for Sns 2 Thin Films Grown by Rf-Magnetron Sputtering
    (Elsevier, 2020) Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, M.; Gasanly, N. M.
    [No Abstract Available]
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    Article
    Citation - WoS: 13
    Citation - Scopus: 15
    Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
    (Springer, 2019) Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M.
    In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide (ZnO) thin film-based diode. The sandwich structure in the form of Ag/ZnO/Si/Al is investigated at temperatures between 220 and 360 K and in the frequency region of 1 kHz-1 MHz. ZnO thin film layer is deposited on a p-Si wafer substrate as a transparent conductive oxide layer by taking into consideration possible electronic applications with intrinsic attractive material properties. At each temperature step, the I-V curves showed about two orders of magnitude rectifying behavior and, according to the Schottky diode relation, the saturation current, zero-bias barrier height and ideality factor were extracted as a function of the temperature. In the case of non-ideal diode characteristics due to the inhomogeneties in the diode as observed from the characteristics of the calculated parameters, effective barrier height values are evaluated. In addition, based on the existence of the interface layer, density of interface states in the band gap region and parasitic resistances were determined by the capacitance measurements.
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    Article
    Citation - WoS: 16
    Citation - Scopus: 16
    Frequency Effect on Electrical and Dielectric Characteristics of In/Cu2< Diode Structure
    (Springer, 2019) Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M.
    In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with series resistance values and density of interface states were investigated by taking into consideration of non-ideal electrical characteristics of the diode. The distribution profile of the interface states was extracted by Hill-Coleman and high-low frequency capacitance methods. As a function of frequency, they were in proportionality with the inverse of applied frequency. Dielectric constant and dielectric loss parameters were calculated from the maximum value of the diode capacitance at the strong accumulation region. The loss tangent showed a characteristic peak behavior at each frequency. Based on the time-dependent response of the interfacial charges to the applied ac field, the values of ac electrical conductivity and complex electric modulus were calculated and discussed as a function of frequency and bias voltage.
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    Article
    Citation - WoS: 12
    Citation - Scopus: 12
    Material and Si-based diode analyses of sputtered ZnTe thin films
    (Springer, 2020) Gullu, H. H.; Surucu, O. Bayrakli; Isik, M.; Terlemezoglu, M.; Parlak, M.
    Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showed that ZnTe thin films grown on soda-lime glass substrates have a cubic crystalline structure. This crystalline nature of the films was also discussed in terms of Raman active modes. From atomic force microscopy images, the smooth and dense surface profile was observed. The conductivity of the film at room temperature was measured as 2.45 x 10(-4)(omega cm)(-1)and the temperature dependency of conductivity showed Arrhenius behavior. The dark conductivity profile was modeled by thermionic emission mechanism and activation energies were extracted. In addition, the conductivity values indicated an increasing behavior with illumination intensity applied between 20 and 115 mW/cm(2). The heterojunction diode was generated by sputtering ZnTe film on n-Si wafer substrate and the rectification behavior was evaluated to determine the main diode parameters.
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    Article
    Citation - WoS: 31
    Citation - Scopus: 31
    Frequency Effect on Electrical and Dielectric Characteristics of Hfo2-interlayered Si-Based Schottky Barrier Diode
    (Springer, 2020) Gullu, H. H.; Yildiz, D. E.; Surucu, O.; Parlak, M.
    This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calculated from the forward bias current-voltage curve at room temperature under dark conditions as 0.79 eV and 4.22 eV, respectively. In order to get detailed information about density of interface states and series resistance of this structure, capacitance-voltage and conductance-voltage measurements in the frequency range of 10-1000 kHz were performed. As a result, a decreasing capacitance profile with increasing frequency was obtained. In addition, peak-like behavior in the capacitance profiles was observed and these were found to be the indication of density of states. Further analysis was performed on the evaluation of density of interface states values and these values were calculated by using two different methods: Hill-Coleman and high-low frequency capacitance. These profiles were also analyzed by eliminating the effect of series resistance values on the measured capacitance and conductance; then the values of corrected capacitance and conductance as a function of applied voltage were discussed. Based on these analyses on the capacitive characteristics of the diode, dielectric constant, dielectric loss, loss tangent, electrical conductivity, and the real and imaginary part of electric modulus were investigated for complete understanding on the diode characteristics.
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    Article
    Citation - WoS: 10
    Citation - Scopus: 10
    Cztsse Thin Films Fabricated by Single Step Deposition for Superstrate Solar Cell Applications
    (Springer, 2019) Terlemezoglu, M.; Surucu, O. Bayrakli; Dogru, C.; Gullu, H. H.; Ciftpinar, E. H.; Ercelebi, C.; Parlak, M.
    The focus of this study is the characterization of Cu2ZnSn(S,Se)(4) (CZTSSe) thin films and fabrication of CZTSSe solar cell in superstrate configuration. In this work, superstrate-type configuration of glass/ITO/CdS/CZTSSe/Au was entirely fabricated by totally vacuum-based process. CZTSSe absorber layers were grown by RF magnetron sputtering technique using stacked layer procedure. SnS, CuSe and ZnSe solid targets were used as precursors and no additional step like the selenization process was applied. The structural and morphological properties of deposited CZTSSe layers were analyzed using X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. The optical and electrical properties of the CZTSSe thin films were investigated by UV-Vis spectroscopy, Hall-Effect and photoconductivity measurements. In addition, the device performance of the fabricated superstrate solar cell was examined.