Sürücü, Özge

Sürücü, Özge

Profile URL

https://hdl.handle.net/20.500.14411/7179

Name Variants

Bayrakll Ö.
O., Surucu
Bayrakli O.
Bayrakli, Ozge
O.,Surucu
Surucu, Ozge
Ö.,Sürücü
Ozge, Surucu
Sürücü, Özge
Ö., Sürücü
Bayraklı Sürücü Ö.
Özge, Sürücü
Sürücü,Ö.
Surucu, O. Bayrakli
Bayrakli Sürücü O.
Bayraklı Ö.
Surucu,O.
Bayrakli Surucu O.
Bayrakli Ö.
Sürücü Ö.
S.,Ozge
Bayrakli, O.
S., Özge
S., Ozge
S.,Özge
Bayrakli Surucu, Ozge
Surucu O.
Surucu, O.
Bayrakli Sürücü Ö.

Job Title

Doçent Doktor

Email Address

ozge.surucu@atilim.edu.tr

Main Affiliation

Electrical-Electronics Engineering

ORCID ID

0000-0002-8478-1267

WoS Researcher ID

ABA-4839-2020

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Sustainable Development Goals

14

LIFE BELOW WATER

0

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2

ZERO HUNGER

0

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11

SUSTAINABLE CITIES AND COMMUNITIES

0

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1

NO POVERTY

0

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12

RESPONSIBLE CONSUMPTION AND PRODUCTION

0

Research Products

7

AFFORDABLE AND CLEAN ENERGY

13

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5

GENDER EQUALITY

0

Research Products

3

GOOD HEALTH AND WELL-BEING

0

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9

INDUSTRY, INNOVATION AND INFRASTRUCTURE

0

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13

CLIMATE ACTION

0

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6

CLEAN WATER AND SANITATION

0

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10

REDUCED INEQUALITIES

0

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4

QUALITY EDUCATION

0

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15

LIFE ON LAND

0

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16

PEACE, JUSTICE AND STRONG INSTITUTIONS

0

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17

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0

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8

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0

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This researcher does not have a Scopus ID.

Documents

55

Citations

822

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Scholarly Output

44

Articles

41

Views / Downloads

14/0

Supervised MSc Theses

1

Supervised PhD Theses

0

WoS Citation Count

605

Scopus Citation Count

613

WoS h-index

15

Scopus h-index

15

Patents

0

Projects

0

WoS Citations per Publication

13.75

Scopus Citations per Publication

13.93

Open Access Source

5

Supervised Theses

1

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Journal	Count
Journal of Materials Science: Materials in Electronics	7
Applied Physics A	4
Materials Letters	3
Materials Science in Semiconductor Processing	3
Physica Scripta	3

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Scholarly Output Search Results

Now showing 1 - 10 of 13

Citation - WoS: 11
Citation - Scopus: 12
Structural and Temperature-Tuned Bandgap Characteristics of Thermally Evaporated β-in_{2< Thin Films}
(Springer, 2021) Surucu, O.; Isik, M.; Terlemezoglu, M.; Gasanly, N. M.; Parlak, M.
In2S3 is one of the attractive compounds taking remarkable interest in optoelectronic device applications. The present study reports the structural and optical characteristics of thermally evaporated beta-In2S3 thin films. The crystalline structure of the thin films was found as cubic taking into account the observed diffraction peaks in the X-ray diffraction pattern. The atomic compositional ratio of constituent elements was obtained as consistent with chemical formula of In2S3. Three peaks around 275, 309 and 369 cm(-1) were observed in the Raman spectrum. Temperature-tuned bandgap energy characteristics of the In2S3 thin films were revealed from the investigation of transmittance spectra obtained at various temperatures between 10 and 300 K. The analyses of the transmittance spectra indicated that direct bandgap energy of the In2S3 thin films decreases from 2.40 eV (at 10 K) to 2.37 eV (at 300 K) with the increase of measurement temperature. The bandgap energy vs. temperature relation was investigated by means of Varshni optical model. The fitting of the experimental data under the light of theoretical expression revealed the absolute zero bandgap energy, the rate of change of bandgap energy and Debye temperature.
Citation - WoS: 23
Citation - Scopus: 23
Exploring Temperature-Dependent Bandgap and Urbach Energies in Cdte Thin Films for Optoelectronic Applications
(Elsevier, 2024) Surucu, O.; Surucu, G.; Gasanly, N. M.; Parlak, M.; Isik, M.
This study examines CdTe thin films deposited via RF magnetron sputtering, focusing on structural and optical properties. X-ray diffraction, Raman spectroscopy, and SEM assessed structural characteristics. Optical properties were analyzed through transmittance measurements from 10 to 300 K. Tauc plots and Varshni modeling revealed a temperature-dependent bandgap, increasing from 1.49 eV at room temperature to 1.57 eV at 10 K. Urbach energy rose from 82.7 to 93.7 meV with temperature. These results are essential for applications where temperature affects CdTe-based device performance.
Citation - WoS: 4
Citation - Scopus: 4
Growth and Optical Characterization of Sn_0.6sb_{0.4< Layer Single Crystals for Optoelectronic Applications}
(Elsevier Sci Ltd, 2022) Bektas, T.; Terlemezoglu, M.; Surucu, O.; Isik, M.; Parlak, M.
SnSe compound is an attractive semiconductor material due to its usage in photovoltaic applications. The sub-stitution of Sb in the SnSe compound presents a remarkable advantage especially in point of tuning optical characteristics. The present paper reports the structural and optical properties of Sn1-xSbxSe (x = 0.4) layered single crystals grown by the vertical Bridgman method. To the best of our knowledge, this work is the first investigation of the Sn0.6Sb0.4Se crystal grown with the vertical Bridgman technique. X-ray diffraction (XRD) pattern of the grown crystal indicated the well crystalline structure of the grown crystals. Lattice strain and interplanar spacing of the crystal structure were determined using the XRD pattern. Scanning electron micro-scope images allowed to the observation of the layer crystal structure. The layer crystalline structure shows 2D material properties and provides 2D applications. Optical properties were revealed by carrying out Raman, ellipsometry and transmission measurements. Raman modes, refractive index, extinction coefficient, and dielectric spectra, band gap energy of the crystal were presented throughout the paper. The obtained results indicated that Sn1-xSbxSe (x = 0.4) layer single crystals may be an alternative potential for photovoltaic and optoelectronic applications.
Citation - WoS: 9
Citation - Scopus: 9
Temperature Effects on Optical Characteristics of Thermally Evaporated Cusbse₂ Thin Films for Solar Cell Applications
(Elsevier, 2022) Surucu, O.; Isik, M.; Terlemezoglu, M.; Bektas, T.; Gasanly, N. M.; Parlak, M.
CuSbSe2 thin film was deposited by co-evaporation of binary CuSe and Sb2Se3 sources. The structural and morphological properties of the deposited thin film were investigated with X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray analysis measurements. XRD pattern indicated that deposited thin film has an orthorhombic crystalline structure with the preferential orientation of (013) direction. SEM image presented that the thin film surface is almost uniform. The optical characteristics of the deposited CuSbSe2 thin film were investigated in detail by performing room temperature Raman, temperature-dependent transmittance spectroscopy, and photoluminescence techniques. Raman spectrum exhibited one mode at around 210 cm(-1) associated with A(g) vibrational mode. The derivative spectroscopy technique was used to obtain the band gap energy of the films. Temperature dependence of band gap energy was investigated by considering the Varshni model. The rate of change of band gap energy, absolute zero value of gap energy, and Debye temperature were determined as 1.3 x 10(-4) eV/K, 1.21 eV, and 297 +/- 51 K, respectively. The photoluminescence spectrum indicated the room temperature direct band gap energy as 1.30 eV.
Citation - WoS: 17
Citation - Scopus: 18
Investigation of Band Gap Energy Versus Temperature for Sns 2 Thin Films Grown by Rf-Magnetron Sputtering
(Elsevier, 2020) Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, M.; Gasanly, N. M.
[No Abstract Available]
Citation - WoS: 9
Citation - Scopus: 10
Temperature Effects on Optical Characteristics of Cdse Thin Films
(Elsevier Sci Ltd, 2021) Gullu, H. H.; Isik, M.; Surucu, O.; Gasanly, N. M.; Parlak, M.
CdSe is one of the significant members of II-VI type semiconducting family and it has a wide range of technological applications in which optoelectronic devices take a special position. The present paper reports the structural and optical characteristics of thermally evaporated CdSe thin films. XRD pattern exhibited preferential orientation along (111) plane while atomic composition analyses resulted in the ratio of Cd/Se as closer to 1.0. Temperature-dependent band gap characteristics of CdSe thin films were investigated for the first time by carrying out transmission experiments in the 10-300 K range. The analyses showed that direct band gap energy of the compound decreases from 1.750 (at 10 K) to 1.705 eV (at 300 K). Varshni model was successfully applied to the temperature-band gap energy dependency and various optical constants were determined. Raman spectrum of CdSe thin films was also presented to understand the vibrational characteristics of the compound. The present paper would provide worthwhile data to researchers especially studying on optoelectronic device applications of CdSe thin films.
Citation - WoS: 25
Citation - Scopus: 25
Temperature-Tuned Band Gap Properties of Mos₂ Thin Films
(Elsevier, 2020) Surucu, O.; Isik, M.; Gasanly, N. M.; Terlemezoglu, M.; Parlak, M.
MoS2 is one of the fascinating members of transition metal dichalcogenides and has attracted great attention due to its various optoelectronic device applications and its characteristic as two-dimensional material. The present paper reports the structural and temperature tuned optical properties of MoS2 thin films grown by RF magnetron sputtering technique. It was observed that the atomic composition ratio of Mo:S was nearly equal to 1:2 and the deposited thin films have hexagonal crystalline structure exhibiting Raman peaks around 376 and 410 cm(-1). The band gap energies were determined as 1.66 and 1.71 eV at 300 and 10 K, respectively and temperature dependency of band gap energy was analyzed by means of Varshni and O'Donnell-Chen models. (C) 2020 Elsevier B.V. All rights reserved.
Citation - WoS: 4
Citation - Scopus: 3
Temperature-dependent material characterization of CuZnSe₂ thin films
(Elsevier Science Sa, 2020) Gullu, H. H.; Surucu, O.; Terlemezoglu, M.; Isik, M.; Ercelebi, C.; Gasanly, N. M.; Parlak, M.
In the present work, CuZnSe2 (CZSe) thin films were co-deposited by magnetron sputtering of ZnSe and Cu targets. The structural analyses resulted in the stoichiometric elemental composition and polycrystalline nature without secondary phase contribution in the film structure. Optical and electrical properties of CZSe thin films were investigated using temperature-dependent optical transmission and electrical conductivity measurements. The band gap energy values were obtained using transmittance spectra under the light of expression relating absorption coefficient to incident photon energy. Band gap energy values were found in decreasing behavior from 2.31 to 2.27 eV with increase in temperature from 10 to 300 K. Temperature-band gap dependency was evaluated by Varshni and O'Donnell models to detail the optical parameters of the thin films. The experimental dark and photoconductivity values were investigated by thermionic emission model over the grain boundary potential. Room temperature conductivity values were obtained in between 0.91 and 4.65 ( x 10(-4) Omega(-1)cm(-1)) under various illumination intensities. Three different linear conductivity regions were observed in the temperature dependent profile. These linear regions were analyzed to extract the activation energy values.
Citation - WoS: 12
Citation - Scopus: 12
Material and Si-based diode analyses of sputtered ZnTe thin films
(Springer, 2020) Gullu, H. H.; Surucu, O. Bayrakli; Isik, M.; Terlemezoglu, M.; Parlak, M.
Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showed that ZnTe thin films grown on soda-lime glass substrates have a cubic crystalline structure. This crystalline nature of the films was also discussed in terms of Raman active modes. From atomic force microscopy images, the smooth and dense surface profile was observed. The conductivity of the film at room temperature was measured as 2.45 x 10(-4)(omega cm)(-1)and the temperature dependency of conductivity showed Arrhenius behavior. The dark conductivity profile was modeled by thermionic emission mechanism and activation energies were extracted. In addition, the conductivity values indicated an increasing behavior with illumination intensity applied between 20 and 115 mW/cm(2). The heterojunction diode was generated by sputtering ZnTe film on n-Si wafer substrate and the rectification behavior was evaluated to determine the main diode parameters.
Citation - WoS: 10
Citation - Scopus: 10
Temperature Dependent Band Gap in Sns₂_{x< (x=0.5) Thin Films}
(Elsevier Sci Ltd, 2020) Delice, S.; Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Gasanly, N. M.; Parlak, M.
Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy and scanning electron microscopy methods were used for structural characterization while temperature-dependent transmission measurements carried out at various temperatures in between 10 and 300 K were accomplished for optical investigations. X-ray diffraction pattern of studied composition presented peaks at positions which are between those of SnSe2 and SnS2. Transmittance spectra recorded at all applied temperatures were analyzed using well-known Tauc relation. Analyses revealed the direct band gap energy value of SnSSe thin films as 1.75 eV at room temperature. Change of band gap energy as a response to varying temperature were discussed in the study by utilizing Varshni relation. It was shown that variation of gap energy values was well-matched with the Varshni's empirical formula. Energy band gap at absolute zero and rate of change of band gap with temperature were found to be 1.783 eV and -2.1 x 10(-4) eV K-1, respectively.

Sürücü, Özge

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Sustainable Development Goals

14

LIFE BELOW WATER

0

Research Products

2

ZERO HUNGER

0

Research Products

11

SUSTAINABLE CITIES AND COMMUNITIES

0

Research Products

1

NO POVERTY

0

Research Products

12

RESPONSIBLE CONSUMPTION AND PRODUCTION

0

Research Products

7

AFFORDABLE AND CLEAN ENERGY

13

Research Products

5

GENDER EQUALITY

0

Research Products

3

GOOD HEALTH AND WELL-BEING

0

Research Products

9

INDUSTRY, INNOVATION AND INFRASTRUCTURE

0

Research Products

13

CLIMATE ACTION

0

Research Products

6

CLEAN WATER AND SANITATION

0

Research Products

10

REDUCED INEQUALITIES

0

Research Products

4

QUALITY EDUCATION

0

Research Products

15

LIFE ON LAND

0

Research Products

16

PEACE, JUSTICE AND STRONG INSTITUTIONS

0

Research Products

17

PARTNERSHIPS FOR THE GOALS

0

Research Products

8

DECENT WORK AND ECONOMIC GROWTH