Qasrawı, Atef Fayez Hasan

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https://hdl.handle.net/20.500.14411/7716
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Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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Scholarly Output

222

Articles

218

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WoS Citation Count

1887

Scopus Citation Count

1907

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JournalCount
Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
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Scholarly Output Search Results

Now showing 1 - 7 of 7
  • Thumbnail Image
    Article
    Citation - WoS: 6
    Citation - Scopus: 6
    Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices
    (Wiley-v C H verlag Gmbh, 2015) Al Garni, S. E.; Qasrawi, A. F.
    In this work, a Ge/BN isotype electronic device that works as a selective microwave bandstop filter is designed and characterized. The interface is designed using a 50-m thick p-type BN on a 0.2-m thick p-type germanium thin film. The modeling of current-voltage characteristics of the Al/Ge/BN/C channel of the device revealed that the current is dominated by thermionic emission and by the tunneling of charged particles through energy barriers. The evaluation of the conduction parameters reflected a resonant circuit with a peak-to-valley current ratio of (PVCR) of 63 at a peak (V-p) and valley (V-v) voltages of 1.84 and 2.30V, respectively. The ac signal analysis of the Al/Ge/BN/C channel that was carried out in the frequency range of 1.0-3.0GHz displayed a bandstop filter properties with notch frequency (f(n)) of 2.04GHz and quality factor (Q) of 102. The replacement of the Al electrode by C through the C/Ge/BN/C channel caused the disappearance of the PVCR and shifted f(n) and Q to 2.70GHz and 100, respectively. The features of the Ge/BN device are promising as they indicate the applicability of these sensors in communication technology.
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    Article
    Citation - WoS: 5
    Citation - Scopus: 5
    Structural and Electrical Characterizations of the as Grown and Annealed Au/Mοo3< Bandpass Filters
    (Wiley, 2019) Khanfar, Hazem K.; Qasrawi, Atef; Daraghmeh, Masa; Abusaa, Muayad
    In this work, the structural, morphology, and electrical properties of two 500 nm thick molybdenum trioxide layers that are sandwiched with indium slab of thickness of 200 nm (MoO3/In/MoO3 [MIM]) to form a bandpass filter are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), and impedance spectroscopy techniques, respectively. The MIM films which coated onto Au thin film substrates by the thermal evaporation technique under vacuum pressure of 10(-5) mbar was post annealed at 250 degrees C in air atmosphere. While the XRD analysis revealed polycrystalline hexagonal lattice structure of the Au/MLM samples, the SEM and EDS analysis displayed grains of sizes of 350 nm and stoichiometric structure of MoO3. Electrically, indium layer which caused n-type conduction with donor level of 299 meV, forced the material to exhibit negative capacitance (NC) effect at high frequencies (above 1.1 GHz). The impedance spectroscopy which was recorded in the frequency domain of 0.01 to 1.80 GHz, also revealed low pass and high pass filters characteristics in the low and high frequency domains, respectively. The annealing of the Au/MIM samples, decreased the crystallite and grain sizes and increased the microstrain, the defect density and the stacking faults. Small amount of excess oxygen and some indium deficiency are observed upon annealing. In addition, the annealing shifted the donor level closer to the bottom of the conduction band and inverted the NC effect from high to low frequency regions. The study indicates the applicability of the Au/MIM/C structures as microwave cavities and parasitic capacitance cancellers in electronic circuits.
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    Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Performance of Ge-Sandwiched Gase Layers
    (Springer, 2018) Qasrawi, A. F.; Qasrawı, Atef Fayez Hasan; Abdallah, Maisam M. A.; Qasrawı, Atef Fayez Hasan; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
    In the current work, we report the effect of sandwiching Ge between two stacked layers of GaSe. The GaSe and Ge-sandwiched GaSe were subjected to x-ray diffraction, optical spectrophotometry and impedance spectroscopy measurement and analysis. The presence of a Ge layer between two layers of GaSe was observed to cause uniform deformation and increase the absorption of light by GaSe. The response of the dielectric constant to incident light was also significantly enhanced by Ge sandwiching. In addition, Drude-Lorentz modeling of the imaginary part of the dielectric constant revealed that the layer of Ge layer between GaSe layers increased the drift mobility from 30.76 cm(2)/Vs to 52.49 cm(2)/Vs. It also enhanced the plasmon frequency without altering the free carrier density. Moreover, Ge improved the band filtering features of GaSe. In particular, it enhanced the sensitivity of the impedance response to the incident signal and increased the return loss factor of GaSe when it was used as a high band pass filter.
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    Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Dielectric and Optoelectronic Properties of Inse/Cds Heterojunctions
    (Springer, 2018) Abusaa, M.; Qasrawi, A. F.; Shehada, Sufyan R.
    The effect of an InSe substrate on the structural, optical and dielectric properties of CdS/CdSe heterojunctions prepared by physical vapor deposition technique under vacuum pressure of 10(-8) bar are reported. The structural analysis carried out by x-ray diffraction revealed a strained type of growth of the CdS/CdSe heterojunction onto the InSe along the axis of the hexagonal lattice. The lattice mismatches and strained nature of the heterojunctions associated with the InSe participation causes a quantum confinement that results in a red shift in the energy band gap, enhanced near infrared (IR) light absorbability, and valence band offsets of 0.62eV and 0.53eV for the InSe/CdS and CdS/CdSe interfaces, respectively. In addition, a pronounced enhancement in the real part of the dielectric constant by 2.5 times is observed at 1.25eV. Furthermore, the Durde-Lorentz modeling of the optical conductivity of the CdS/CdSe and InSe/CdS/CdSe reveals significant increases in the drift mobility values from 43.8cm(2)/Vs at the CdS/CdSe interface to 100.0cm(2/)Vs upon replacement of glass by an amorphous InSe substrate. The other optical conduction parameters including the free carrier scattering time at the femtosecond level, the plasmon frequency and the free carrier density are also improved accordingly. The photocurrent illumination intensity dependence for the studied system showed that the presence of InSe increases the photocurrent values and changes the recombination mechanism from sublinear at the surface to trap-assisted recombination. The smart feature of the InSe/CdS/CdSe system is that the structurally controlled quantum confinement results in having mobile photocarriers arising from the enhanced absorbability and large dielectric response in the IR region.
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    Article
    Citation - WoS: 5
    Citation - Scopus: 4
    Properties of Se/Inse Thin-Film Interface
    (Springer, 2016) Qasrawi, A. F.; Qasrawı, Atef Fayez Hasan; Kayed, T. S.; Elsayed, Khaled A.; Kayed, Tarek Said; Qasrawı, Atef Fayez Hasan; Kayed, Tarek Said; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
    Se, InSe, and Se/InSe thin films have been prepared by the physical vapor deposition technique at pressure of similar to 10(-5) torr. The structural, optical, and electrical properties of the films and Se/InSe interface were investigated by means of x-ray diffraction (XRD) analysis, ultraviolet-visible spectroscopy, and current-voltage (I-V) characteristics. XRD analysis indicated that the prepared InSe films were amorphous while the Se films were polycrystalline having hexagonal structure with unit cell parameters of a = 4.3544 and c = 4.9494 . Spectral reflectance and transmittance analysis showed that both Se and InSe films exhibited indirect allowed transitions with energy bandgaps of 1.92 eV and 1.34 eV, respectively. The Se/InSe interface exhibited two energy bandgaps of 0.98 eV and 1.73 eV above and below 2.2 eV, respectively. Dielectric constant values were also calculated from reflectance spectra for the three layers in the frequency range of 500 THz to 272 THz. The dielectric constant exhibited a promising feature suggesting use of the Se/InSe interface as an optical resonator. Moreover, the Au/Se/InSe/Ag heterojunction showed some rectifying properties that could be used in standard optoelectronic devices. The ideality factor and height of the energy barrier to charge carrier motion in this device were found to be 1.72 and 0.66 eV, respectively.
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    Article
    Citation - WoS: 3
    Citation - Scopus: 4
    Structural and Optical Properties of the Zns/Gase Heterojunctions
    (Iop Publishing Ltd, 2017) Alharbi, S. R.; Abdallaha, Maisam M. A.; Qasrawi, A. F.
    In the current work, the ZnS/GaSe thin film heterojunction interfaces are experimentally designed and characterized by means of x-ray diffraction, scanning electron microscopy, energy dispersion spectroscopy and optical spectroscopy techniques. The heterojunction is observed to exhibit physical nature of formation with an induced crystallization of GaSe by the ZnS substrate. For this heterojunction, the hot probe technique suggested the formation of a p-ZnS/n-GaSe interface. In addition, the designed energy band diagram of the heterojunction which was actualized with the help of the optical spectrophotometric data analysis revealed a respective conduction and valence band offsets of 0.67 and 0.73 eV. On the other hand, the dielectric dispersion analysis and modeling which was studied in the frequency range of 270-1000 THz, have shown that the interfacing of the ZnS with GaSe strongly affects the properties of ZnS as it reduces the number of free carriers, shifts down the plasmon frequency, increases the charge carrier scattering time and results in higher values of drift mobility at Terahertz frequencies.
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    Article
    Citation - WoS: 8
    Citation - Scopus: 7
    Negative Capacitance Effect in Ag/-in2< Dual Band Stop Filters
    (Springer, 2019) Khanfar, Hazem K.; Qasrawi, A. F.; Shehada, Sufyan R.
    In the current study, a 1.5m thick three channel microwave band filter is designed and characterized. The thin film device which was constructed from the indium selenide, cadmium sulfide and cadmium selenide stacked dielectric materials sandwiched between silver and carbon films is studied by means of x-ray diffraction, energy dispersive x-ray analysis and impedance spectroscopy techniques. It was observed that the Ag thin film substrate induced the formation of the hexagonal -In2Se3 phase of indium selenide. The x-ray analysis has also shown that the deposition of hexagonal CdS over Ag/-In2Se3 and that of hexagonal CdSe over -In2Se3/CdS under vacuum pressure of 10(-8) bar is of a highly strained and mismatched physical nature. The impedance spectroscopy analysis in the frequency domain of 0.10-1.80GHz has shown that; while the Ag/-In2Se3/C channel exhibit negative capacitance (NC) effects in the frequency domain of 0.10-1.40GHz, the Ag/-In2Se3/CdS/C and the Ag/-In2Se3/CdS/CdSe/C channels displayed a NC feature in the domains of 1.24-1.40GHz and 1.10-1.56GHz, respectively. The fitting of the capacitance spectra in accordance with the modified Ershov model allowed determining the NC and band filtering parameters. It was also observed that, although the Ag/-In2Se3/C channel behaves as a high frequency low pass filter, the second and third channels displayed band stop filter features with notch frequencies of 1.38GHz and 1.49GHz, respectively. The features of the device nominate it for use as a parasitic capacitance canceller and as a three channels microwave filter.