Qasrawı, Atef Fayez Hasan

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Profile URL
https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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Scopus Author ID
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WoS Researcher ID

Sustainable Development Goals

NO POVERTY1
NO POVERTY
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ZERO HUNGER2
ZERO HUNGER
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GOOD HEALTH AND WELL-BEING3
GOOD HEALTH AND WELL-BEING
0
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QUALITY EDUCATION4
QUALITY EDUCATION
0
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GENDER EQUALITY5
GENDER EQUALITY
0
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CLEAN WATER AND SANITATION6
CLEAN WATER AND SANITATION
0
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AFFORDABLE AND CLEAN ENERGY7
AFFORDABLE AND CLEAN ENERGY
17
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DECENT WORK AND ECONOMIC GROWTH8
DECENT WORK AND ECONOMIC GROWTH
0
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INDUSTRY, INNOVATION AND INFRASTRUCTURE9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
0
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REDUCED INEQUALITIES10
REDUCED INEQUALITIES
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SUSTAINABLE CITIES AND COMMUNITIES11
SUSTAINABLE CITIES AND COMMUNITIES
0
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RESPONSIBLE CONSUMPTION AND PRODUCTION12
RESPONSIBLE CONSUMPTION AND PRODUCTION
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CLIMATE ACTION13
CLIMATE ACTION
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LIFE BELOW WATER14
LIFE BELOW WATER
0
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LIFE ON LAND15
LIFE ON LAND
0
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PEACE, JUSTICE AND STRONG INSTITUTIONS16
PEACE, JUSTICE AND STRONG INSTITUTIONS
1
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PARTNERSHIPS FOR THE GOALS17
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This researcher does not have a Scopus ID.
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Scholarly Output

226

Articles

222

Views / Downloads

677/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1894

Scopus Citation Count

1915

Patents

0

Projects

0

WoS Citations per Publication

8.38

Scopus Citations per Publication

8.47

Open Access Source

17

Supervised Theses

0

JournalCount
Crystal Research and Technology16
Journal of Electronic Materials15
physica status solidi (a)12
Materials Science in Semiconductor Processing11
Journal of Alloys and Compounds11
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Start date: 2020Subject: X-ray

Scholarly Output Search Results

Now showing 1 - 4 of 4
  • Thumbnail Image
    Article
    Citation - WoS: 2
    Role of Au Nanosheets in Enhancing the Performance of Yb/Zns Tunneling Photosensors
    (Natl inst R&d Materials Physics, 2020) Abusaa, M.; Qasrawi, A. F.; Assad, B. M.; Khanfar, H. K.; Asaad, B.M.
    In this study, the effects of Au nanosheets of thicknesses of 50 nm on the structural, electrical and photoelectrical properties of Yb/ZnS/CdS/Au (ZAC-0) devices is considered. Stacked layers of ZnS and CdS which are prepared by the thermal evaporation technique onto Yb substrates under vacuum pressure of 10(-5) mbar exhibits rectifying characteristics. For these diodes a reverse to forward current ratios of similar to 10(5) at biasing voltage of 0.60 V is determined. Insertion of Au nanosheets between the stacked layers of ZnS and CdS increased the current values by three orders of magnitude and changed the current conduction mechanism from thermionic emission to tunneling under reverse biasing conditions. The ZAC-0 device, exhibit a barrier height lowering and barrier widening upon insertion of Au nanosheets. After the participation of Au nanosheets in the structure of the ZAC-0 devices, large photosensitivity and responsivity accompanied with high external quantum efficiency is observed. The responsivity to 406 nm laser radiation is biasing voltage dependent and reaches 135 mA/W at 0.60 V. The features of the Yb/ZnS/Au/CdS/Au photosensors nominate them as promising candidates for use in light communication technology as signal receivers.
  • Thumbnail Image
    Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Structural, Optical and Dielectric Performance of Molybdenum Trioxide Thin Films Sandwiched With Indium Sheets
    (inst Materials Physics, 2020) Abusaa, M.; Qasrawi, A. F.; Kmail, H. K.; Khanfar, H. K.; Department of Electrical & Electronics Engineering
    In this work, we report the enhancements in the structural, optical and dielectric properties of molybdenum trioxide that are achieved by insertion of 50 and 100 nm thick indium sheets between layers of MoO3. The films which are coated onto ultrasonically glass substrates under a vacuum pressure of 10 -5 mbar exhibited metal induced crystallization process upon insertion of indium sheets. Optically, indium sheets tuned the transmittance and reflectance, significantly, increased the absorption coefficient values and formed interbands in the band gap of MoO3. The energy band gap decreased with increasing indium sheets thickness. On the other hand, the insertion of indium layers into the structure of MoO3 is observed to improve the dielectric response of these films to values that nominate them for used in thin film transistor technology. In the same context, the analyses of the optical conductivity which are carried out with the help of Drude-Lorentz approach have shown that the presence of indium sheets can increase the optical conductivity and enhance the plasmon frequency and free charge carrier density of MoO3. The plasmon frequency is tuned in the range of 1.68-7.16 GHz making MoO3 films attractive for plasmonic applications.
  • Thumbnail Image
    Article
    Citation - Scopus: 2
    Role of au nanosheets in enhancing the performance of yb/zns/cds/au tunneling photosensors
    (S.C. Virtual Company of Phisics S.R.L, 2020) Abusaa,M.; Qasrawi,A.F.; Asaad,B.M.; Khanfar,H.K.
    In this study, the effects of Au nanosheets of thicknesses of 50 nm on the structural, electrical and photoelectrical properties of Yb/ZnS/CdS/Au (ZAC-0) devices is considered. Stacked layers of ZnS and CdS which are prepared by the thermal evaporation technique onto Yb substrates under vacuum pressure of 10-5 mbar exhibits rectifying characteristics. For these diodes a reverse to forward current ratios of ~105 at biasing voltage of 0.60 V is determined. Insertion of Au nanosheets between the stacked layers of ZnS and CdS increased the current values by three orders of magnitude and changed the current conduction mechanism from thermionic emission to tunneling under reverse biasing conditions. The ZAC-0 device, exhibit a barrier height lowering and barrier widening upon insertion of Au nanosheets. After the participation of Au nanosheets in the structure of the ZAC-0 devices, large photosensitivity and responsivity accompanied with high external quantum efficiency is observed. The responsivity to 406 nm laser radiation is biasing voltage dependent and reaches 135 mA/W at 0.60 V. The features of the Yb/ZnS/Au/CdS/Au photosensors nominate them as promising candidates for use in light communication technology as signal receivers. © 2020, S.C. Virtual Company of Phisics S.R.L. All rights reserved.
  • Thumbnail Image
    Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Observation of in Situ Enhanced Crystallization, Negative Resistance Effect and Photosensitivity in Tl2ingase4< Crystals
    (Elsevier Sci Ltd, 2021) Qasrawi, A. F.; Irshaid, Tahani M. A.; Gasanly, N. M.
    In this work, we report the properties of Tl2InGaSe4 crystals as multifunctional material. Namely, Tl2InGaSe4 crystals are grown by the modified Bridgman method using mixtures of TlInSe2 (50%) and TlGaSe2 (50%) single crystals. The enhanced crystallization and structural stabilities are monitored by the X-ray diffraction technique during the in situ heating and cooling cycles. The structural analyses on the Tl2InGaSe4 crystals revealed domination of both of the monoclinic and tetragonal phases in the crystals. In addition, the produced crystals are used to fabricate Schottky diodes. While the scanning electron microscopy has shown that the crystals are composed of layered nanosheets, the electrical analyses have shown that the crystals exhibit light photosensitivity of 12.7 under tungsten light illumination of 10 kLuxes. The attenuation in the electrical parameters of the Ag/Tl2InGaSe4/C diodes presented by series resistance, barrier height and ideality factor upon light excitations make them promising for applications in optoelectronics as switches and photodetectors. Moreover, the alternating electrical signals analyses on the capacitance spectra displayed resonance -antiresonance oscillations in the frequency domain of 83-100 MHz. The resistance spectra also exhibited negative resistance effect in the range of 55-135 MHz. These features of the device make it suitable for use as microwave resonators and memory devices as well.