Qasrawı, Atef Fayez Hasan

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https://hdl.handle.net/20.500.14411/7716
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Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
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Doçent Doktor
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atef.qasrawi@atilim.edu.tr
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Department of Electrical & Electronics Engineering
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Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
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Author: Qasrawi, Atef FayezSubject: As2Se3

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    Article
    Citation - WoS: 6
    Citation - Scopus: 5
    Characterization of Au/As2< Multifunctional Tunneling Devices
    (Wiley-v C H verlag Gmbh, 2020) Qasrawi, Atef Fayez
    Herein, the physical design and characterization of the Au/As2Se3 Schottky barrier that is prepared under a vacuum pressure of 10(-5) mbar are reported. The Schottky diodes are characterized by means of X-ray diffraction, energy-dispersive X-ray spectroscopy, current-voltage characteristics, and conductivity, capacitance, and impedance spectroscopy. It is observed that the Schottky barriers exhibit a biasing-dependent large rectification ratio with current conduction mechanisms dominated by the electric field-assisted quantum mechanical tunneling through a barrier height of 0.29 eV and depletion width of 13.3 nm. While the spectral analysis of the alternating current (AC) conductivity reveals mixed conduction with the contribution of both of the tunneling and correlated barriers hopping mechanisms, the capacitance spectra display resonance-antiresonance phenomena at 0.201 GHz. A wide range (0.21-1.80 GHz) of negative capacitance (NC) effects is observed in devices. In addition, the impedance spectroscopy analyses show that the Au/As2Se3 devices exhibit band-stop features with a notch frequency of 1.14 GHz and return loss value of 16 dB. The NC effect, resonance-antiresonance, filtering features, as well as the high rectification ratio at a relatively low biasing voltage (approximate to 0.30 V) nominate the Au/As2Se3 devices for applications which require noise reduction, parasitic effect cancellations, and microwave filtering.