Qasrawı, Atef Fayez Hasan

Profile Picture
Profile URL
https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID

Sustainable Development Goals

2

ZERO HUNGER
ZERO HUNGER Logo

0

Research Products

11

SUSTAINABLE CITIES AND COMMUNITIES
SUSTAINABLE CITIES AND COMMUNITIES Logo

0

Research Products

14

LIFE BELOW WATER
LIFE BELOW WATER Logo

0

Research Products

6

CLEAN WATER AND SANITATION
CLEAN WATER AND SANITATION Logo

0

Research Products

1

NO POVERTY
NO POVERTY Logo

0

Research Products

5

GENDER EQUALITY
GENDER EQUALITY Logo

0

Research Products

9

INDUSTRY, INNOVATION AND INFRASTRUCTURE
INDUSTRY, INNOVATION AND INFRASTRUCTURE Logo

0

Research Products

16

PEACE, JUSTICE AND STRONG INSTITUTIONS
PEACE, JUSTICE AND STRONG INSTITUTIONS Logo

1

Research Products

17

PARTNERSHIPS FOR THE GOALS
PARTNERSHIPS FOR THE GOALS Logo

0

Research Products

15

LIFE ON LAND
LIFE ON LAND Logo

0

Research Products

10

REDUCED INEQUALITIES
REDUCED INEQUALITIES Logo

0

Research Products

7

AFFORDABLE AND CLEAN ENERGY
AFFORDABLE AND CLEAN ENERGY Logo

17

Research Products

8

DECENT WORK AND ECONOMIC GROWTH
DECENT WORK AND ECONOMIC GROWTH Logo

0

Research Products

4

QUALITY EDUCATION
QUALITY EDUCATION Logo

0

Research Products

12

RESPONSIBLE CONSUMPTION AND PRODUCTION
RESPONSIBLE CONSUMPTION AND PRODUCTION Logo

0

Research Products

3

GOOD HEALTH AND WELL-BEING
GOOD HEALTH AND WELL-BEING Logo

0

Research Products

13

CLIMATE ACTION
CLIMATE ACTION Logo

0

Research Products
This researcher does not have a Scopus ID.
This researcher does not have a WoS ID.
Scholarly Output

222

Articles

218

Views / Downloads

642/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1887

Scopus Citation Count

1907

WoS h-index

21

Scopus h-index

21

Patents

0

Projects

0

WoS Citations per Publication

8.50

Scopus Citations per Publication

8.59

Open Access Source

17

Supervised Theses

0

Google Analytics Visitor Traffic

JournalCount
Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
Current Page: 1 / 11

Scopus Quartile Distribution

Competency Cloud

GCRIS Competency Cloud

Filters

20194
Reset filters

Settings

Author: Qasrawi, A. F.Subject: negative capacitance

Scholarly Output Search Results

Now showing 1 - 4 of 4
  • Thumbnail Image
    Article
    Citation - WoS: 5
    Citation - Scopus: 6
    Structural, Optical, Dielectric and Electrical Properties of Al-Doped Znse Thin Films
    (Springer, 2019) Kayed, T. S.; Qasrawi, A. F.; Elsayed, Khaled A.
    In this work, the heavy aluminum doping effects on the compositional, structural, optical, dielectric and electrical properties of ZnSe thin films are investigated. It is observed that the Zn/Se compositional ratio increases with increasing Al content. The major cubic phase of ZnSe becomes more pronounced compared to the hexagonal phase. In addition, the presence of Al in the structure of ZnSe causes lattice constant contraction, decreased the grain size and increased both of the strain and defect density. Optically, the Al doping increased the light absorbability and widens both of the energy band gap and energy interbands which are present in the band gap of ZnSe films. Moreover, the Al doping into ZnSe lowers the high frequency dielectric constant and enhances the optical conductivity. On the other hand, the capacitance spectra which are studied in the frequency domain of 0.01-1.80GHz displayed negative capacitance effect associated with resonance-antiresonance phenomena upon doping of ZnSe with Al. Such enhancements in the physical properties of ZnSe that are achieved via Al doping make the zinc selenide thin films more appropriate for electronic and optoelectronic technological applications.
  • Thumbnail Image
    Article
    Citation - WoS: 14
    Citation - Scopus: 15
    Formation, Negative Capacitance and Negative Conductance Effects in Selenium Stacked Layers Sandwiched With Ag Nanosheets
    (Iop Publishing Ltd, 2019) Qasrawi, A. F.; Aloushi, Hadil D.
    In this work, we report the nature of formation in the presence and absence of Ag nanosheets being inserted between of two stacked layers of Se thin films which are grown onto Au substrates. The Se/Se and Se/Ag/Se films which are prepared by the thermal evaporation technique under vacuum pressure of 10(-5) mbar are studied by means of x-ray diffraction, conductance and capacitance spectroscopy techniques in the frequency domain of 0.01-1.80 GHz. Metal inducted crystallization processes from amorphous to hexagonal phases are achieved by using the Au substrate. The presence of Ag nanosheets of thicknesses of 50 nm between two 500 nm thick stacked layers of Se strongly affects the structural parameters through increasing the lattice constants, the microstrain and the defect density and decreasing the crystallite size. While the two stacked layers of Se sandwiched between Au and In metals displayed negative conductance effect associated with resonance in the capacitance and maximum microwave cutoff frequency (f(co)) of 0.68 GHz near 1.31 GHz, the insertion of Ag nanosheets forced the two stacked layers to exhibit higher positive conductance values and increased the f(co) values to 17.4 GHz. Ag nanosheets also caused negative capacitance (NC) effect in all the studied frequency domain. NC effect is associated with resonance-anti-resonance phenomena in the region of 1.33-1.37 GHz. The features of the selenium stacked layers make them attractive for use in microwave circuits as cavities, noise reducers, parasitic capacitance cancellers and bandpass filters.
  • Thumbnail Image
    Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Enhancement of the Performance of the Cu2se Band Filters Via Yb Nanosandwiching
    (Wiley, 2019) Khusayfan, Najla M.; Qasrawı, Atef Fayez Hasan; Qasrawi, A. F.; Khanfar, Hazem K.; Qasrawı, Atef Fayez Hasan; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
    In this article, we report the experimental and theoretical modeling on the band pass filters that are made of two thin film layers of Cu2Se coated onto aluminum substrates and nanosandwiched with 50 nm ytterbium layers. The nanosandwiching of Yb between two layers of Cu2Se is found to decrease the lattice constant, the defect density, and the strain and increase the grain size in the Cu2Se. Electrically, it is observed that, Al/Cu2Se/Al structure exhibits wave trap characteristics with notch frequency of 1.31 GHz. The Yb-layers improved the performance of the band pass filters by increasing the amplitude of the reflection coefficients, increasing the return loss values and decreasing the voltage standing wave ratios. The calculated conduction and wave trapping parameters nominate the Yb-nanosandwiched Cu2Se films for use in communication technology as they exhibit negative capacitance effect and narrow band pass range.
  • Thumbnail Image
    Article
    Citation - WoS: 8
    Citation - Scopus: 7
    Negative Capacitance Effect in Ag/-in2< Dual Band Stop Filters
    (Springer, 2019) Khanfar, Hazem K.; Qasrawi, A. F.; Shehada, Sufyan R.
    In the current study, a 1.5m thick three channel microwave band filter is designed and characterized. The thin film device which was constructed from the indium selenide, cadmium sulfide and cadmium selenide stacked dielectric materials sandwiched between silver and carbon films is studied by means of x-ray diffraction, energy dispersive x-ray analysis and impedance spectroscopy techniques. It was observed that the Ag thin film substrate induced the formation of the hexagonal -In2Se3 phase of indium selenide. The x-ray analysis has also shown that the deposition of hexagonal CdS over Ag/-In2Se3 and that of hexagonal CdSe over -In2Se3/CdS under vacuum pressure of 10(-8) bar is of a highly strained and mismatched physical nature. The impedance spectroscopy analysis in the frequency domain of 0.10-1.80GHz has shown that; while the Ag/-In2Se3/C channel exhibit negative capacitance (NC) effects in the frequency domain of 0.10-1.40GHz, the Ag/-In2Se3/CdS/C and the Ag/-In2Se3/CdS/CdSe/C channels displayed a NC feature in the domains of 1.24-1.40GHz and 1.10-1.56GHz, respectively. The fitting of the capacitance spectra in accordance with the modified Ershov model allowed determining the NC and band filtering parameters. It was also observed that, although the Ag/-In2Se3/C channel behaves as a high frequency low pass filter, the second and third channels displayed band stop filter features with notch frequencies of 1.38GHz and 1.49GHz, respectively. The features of the device nominate it for use as a parasitic capacitance canceller and as a three channels microwave filter.