Qasrawı, Atef Fayez Hasan

Profile Picture
Profile URL
https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID

Sustainable Development Goals

NO POVERTY1
NO POVERTY
0
Research Products
ZERO HUNGER2
ZERO HUNGER
0
Research Products
GOOD HEALTH AND WELL-BEING3
GOOD HEALTH AND WELL-BEING
0
Research Products
QUALITY EDUCATION4
QUALITY EDUCATION
0
Research Products
GENDER EQUALITY5
GENDER EQUALITY
0
Research Products
CLEAN WATER AND SANITATION6
CLEAN WATER AND SANITATION
0
Research Products
AFFORDABLE AND CLEAN ENERGY7
AFFORDABLE AND CLEAN ENERGY
17
Research Products
DECENT WORK AND ECONOMIC GROWTH8
DECENT WORK AND ECONOMIC GROWTH
0
Research Products
INDUSTRY, INNOVATION AND INFRASTRUCTURE9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
0
Research Products
REDUCED INEQUALITIES10
REDUCED INEQUALITIES
0
Research Products
SUSTAINABLE CITIES AND COMMUNITIES11
SUSTAINABLE CITIES AND COMMUNITIES
0
Research Products
RESPONSIBLE CONSUMPTION AND PRODUCTION12
RESPONSIBLE CONSUMPTION AND PRODUCTION
0
Research Products
CLIMATE ACTION13
CLIMATE ACTION
0
Research Products
LIFE BELOW WATER14
LIFE BELOW WATER
0
Research Products
LIFE ON LAND15
LIFE ON LAND
0
Research Products
PEACE, JUSTICE AND STRONG INSTITUTIONS16
PEACE, JUSTICE AND STRONG INSTITUTIONS
1
Research Products
PARTNERSHIPS FOR THE GOALS17
PARTNERSHIPS FOR THE GOALS
0
Research Products
This researcher does not have a Scopus ID.
This researcher does not have a WoS ID.
Scholarly Output

226

Articles

222

Views / Downloads

721/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1970

Scopus Citation Count

2000

Patents

0

Projects

0

WoS Citations per Publication

8.72

Scopus Citations per Publication

8.85

Open Access Source

17

Supervised Theses

0

JournalCount
Crystal Research and Technology16
Journal of Electronic Materials15
physica status solidi (a)12
Materials Science in Semiconductor Processing11
Journal of Alloys and Compounds11
Current Page: 1 / 11

Scopus Quartile Distribution

Competency Cloud

GCRIS Competency Cloud

Filters

20162
Reset filters

Settings

Author: Kayed, T. S.Subject: Optical materials

Scholarly Output Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Article
    Citation - WoS: 4
    Citation - Scopus: 4
    Band Offsets and Optical Conduction in the Cdse/Gase Interface
    (Elsevier Science Bv, 2016) Kayed, T. S.; Qasrawi, A. F.; Elsayed, Khaled A.
    In this work, the design and characterization of CdSe/GaSe heterojunction is considered. The CdSe/GaSe thin film interface was prepared by the physical vapor deposition technique. Systematic structural and optical analysis were performed to explore the crystalline nature, the optical band gaps, the conduction and valence band offsets, the dielectric spectra, and the frequency dependent optical conductivity at terahertz frequencies. The X-ray diffraction analysis revealed a polycrystalline interface that is mostly dominated by the hexagonal CdSe oriented in the (002) direction. It was also found that the CdSe/GaSe interface exhibits conduction and valence band offsets of 1.35 and 1.23/1.14 eV, respectively. The dielectric spectra displayed two dielectric resonance peaks at 530 and 445 THz. Moreover, the computational fittings of the optical conductivity of the interface revealed a free carrier scattering time of 0.41 (fs) for a free carrier density of 7.0 x 10(18) (cm(-3)). The field effect mobility for the CdSe/GaSe interface was found to be 5.22 (cm(2)/Vs). The remarkable features of this device having large band offsets and qualitative optical conduction dominated by a scattering time in the order of femtoseconds in addition to the dielectric property nominate the device to be used in optoelectronic technology. (C) 2016 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Article
    Citation - WoS: 5
    Citation - Scopus: 4
    Properties of Se/Inse Thin-Film Interface
    (Springer, 2016) Qasrawi, A. F.; Qasrawı, Atef Fayez Hasan; Kayed, T. S.; Elsayed, Khaled A.; Kayed, Tarek Said; Qasrawı, Atef Fayez Hasan; Kayed, Tarek Said; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
    Se, InSe, and Se/InSe thin films have been prepared by the physical vapor deposition technique at pressure of similar to 10(-5) torr. The structural, optical, and electrical properties of the films and Se/InSe interface were investigated by means of x-ray diffraction (XRD) analysis, ultraviolet-visible spectroscopy, and current-voltage (I-V) characteristics. XRD analysis indicated that the prepared InSe films were amorphous while the Se films were polycrystalline having hexagonal structure with unit cell parameters of a = 4.3544 and c = 4.9494 . Spectral reflectance and transmittance analysis showed that both Se and InSe films exhibited indirect allowed transitions with energy bandgaps of 1.92 eV and 1.34 eV, respectively. The Se/InSe interface exhibited two energy bandgaps of 0.98 eV and 1.73 eV above and below 2.2 eV, respectively. Dielectric constant values were also calculated from reflectance spectra for the three layers in the frequency range of 500 THz to 272 THz. The dielectric constant exhibited a promising feature suggesting use of the Se/InSe interface as an optical resonator. Moreover, the Au/Se/InSe/Ag heterojunction showed some rectifying properties that could be used in standard optoelectronic devices. The ideality factor and height of the energy barrier to charge carrier motion in this device were found to be 1.72 and 0.66 eV, respectively.