Qasrawı, Atef Fayez Hasan

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Profile URL
https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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Sustainable Development Goals

NO POVERTY1
NO POVERTY
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ZERO HUNGER2
ZERO HUNGER
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GOOD HEALTH AND WELL-BEING3
GOOD HEALTH AND WELL-BEING
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QUALITY EDUCATION4
QUALITY EDUCATION
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GENDER EQUALITY5
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CLEAN WATER AND SANITATION6
CLEAN WATER AND SANITATION
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AFFORDABLE AND CLEAN ENERGY7
AFFORDABLE AND CLEAN ENERGY
17
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DECENT WORK AND ECONOMIC GROWTH8
DECENT WORK AND ECONOMIC GROWTH
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INDUSTRY, INNOVATION AND INFRASTRUCTURE9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
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REDUCED INEQUALITIES10
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SUSTAINABLE CITIES AND COMMUNITIES11
SUSTAINABLE CITIES AND COMMUNITIES
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RESPONSIBLE CONSUMPTION AND PRODUCTION12
RESPONSIBLE CONSUMPTION AND PRODUCTION
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CLIMATE ACTION13
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LIFE BELOW WATER14
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LIFE ON LAND15
LIFE ON LAND
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PEACE, JUSTICE AND STRONG INSTITUTIONS16
PEACE, JUSTICE AND STRONG INSTITUTIONS
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PARTNERSHIPS FOR THE GOALS17
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Scholarly Output

226

Articles

222

Views / Downloads

677/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1894

Scopus Citation Count

1915

Patents

0

Projects

0

WoS Citations per Publication

8.38

Scopus Citations per Publication

8.47

Open Access Source

17

Supervised Theses

0

JournalCount
Crystal Research and Technology16
Journal of Electronic Materials15
physica status solidi (a)12
Materials Science in Semiconductor Processing11
Journal of Alloys and Compounds11
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Author: Kayed, T. S.Subject: Coating

Scholarly Output Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Article
    Citation - WoS: 4
    Citation - Scopus: 4
    Band Offsets and Optical Conduction in the Cdse/Gase Interface
    (Elsevier Science Bv, 2016) Kayed, T. S.; Qasrawi, A. F.; Elsayed, Khaled A.
    In this work, the design and characterization of CdSe/GaSe heterojunction is considered. The CdSe/GaSe thin film interface was prepared by the physical vapor deposition technique. Systematic structural and optical analysis were performed to explore the crystalline nature, the optical band gaps, the conduction and valence band offsets, the dielectric spectra, and the frequency dependent optical conductivity at terahertz frequencies. The X-ray diffraction analysis revealed a polycrystalline interface that is mostly dominated by the hexagonal CdSe oriented in the (002) direction. It was also found that the CdSe/GaSe interface exhibits conduction and valence band offsets of 1.35 and 1.23/1.14 eV, respectively. The dielectric spectra displayed two dielectric resonance peaks at 530 and 445 THz. Moreover, the computational fittings of the optical conductivity of the interface revealed a free carrier scattering time of 0.41 (fs) for a free carrier density of 7.0 x 10(18) (cm(-3)). The field effect mobility for the CdSe/GaSe interface was found to be 5.22 (cm(2)/Vs). The remarkable features of this device having large band offsets and qualitative optical conduction dominated by a scattering time in the order of femtoseconds in addition to the dielectric property nominate the device to be used in optoelectronic technology. (C) 2016 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Article
    Citation - WoS: 6
    Citation - Scopus: 6
    Al/Cdse Resonant Tunneling Thin Film Transistors
    (Elsevier Science Bv, 2017) Qasrawi, A. F.; Kayed, T. S.; Elsayed, Khaled A.
    An Al/CdSe/GaSe/C thin film transistor device was prepared by the physical vapor deposition technique at a vacuum pressure of 10(-5) mbar. The x-ray diffraction measurements demonstrated the polycrystalline nature of the surface of the device. The de current-voltage characteristics recorded for the Al/CdSe/C and Al/CdSe/GaSe/C channels displayed a resonant tunneling diode features during the forward and reverse voltage biasing, respectively. In addition, the switching current ratio of the Al/CdSe/C increased from 18.6 to 9.62x10(3) as a result of the GaSe deposition on the CdSe surface. Moreover, the alternating electrical signal analyses in the frequency range of 1.0 MHz to 1.8 GHz, showed some remarkable properties of negative resistance and negative capacitance spectra of the AVCdSe/GaSe/C thin film transistors. Two distinct resonance-antiresonance phenomena in the resistance spectra and one in the capacitance spectra were observed at 0.53, 1.04 and 1.40 GHz for the Al/CdSe/C channel, respectively. The respective resonating peak positions of the resistance spectra shift to 0.38 and 0.95 GHz when GaSe is interfaced with CdSe. These features of the thin film transistors are promising for use in high quality microwave filtering circuits and also for use as ultrafast switches.