Qasrawı, Atef Fayez Hasan

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Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
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WoS Researcher ID

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11

SUSTAINABLE CITIES AND COMMUNITIES
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14

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6

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1

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5

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9

INDUSTRY, INNOVATION AND INFRASTRUCTURE
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AFFORDABLE AND CLEAN ENERGY
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This researcher does not have a Scopus ID.
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Scholarly Output

222

Articles

218

Views / Downloads

642/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1887

Scopus Citation Count

1907

WoS h-index

21

Scopus h-index

21

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0

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0

WoS Citations per Publication

8.50

Scopus Citations per Publication

8.59

Open Access Source

17

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0

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JournalCount
Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
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Scholarly Output Search Results

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  • Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Observation of in Situ Enhanced Crystallization, Negative Resistance Effect and Photosensitivity in Tl2ingase4< Crystals
    (Elsevier Sci Ltd, 2021) Qasrawi, A. F.; Irshaid, Tahani M. A.; Gasanly, N. M.
    In this work, we report the properties of Tl2InGaSe4 crystals as multifunctional material. Namely, Tl2InGaSe4 crystals are grown by the modified Bridgman method using mixtures of TlInSe2 (50%) and TlGaSe2 (50%) single crystals. The enhanced crystallization and structural stabilities are monitored by the X-ray diffraction technique during the in situ heating and cooling cycles. The structural analyses on the Tl2InGaSe4 crystals revealed domination of both of the monoclinic and tetragonal phases in the crystals. In addition, the produced crystals are used to fabricate Schottky diodes. While the scanning electron microscopy has shown that the crystals are composed of layered nanosheets, the electrical analyses have shown that the crystals exhibit light photosensitivity of 12.7 under tungsten light illumination of 10 kLuxes. The attenuation in the electrical parameters of the Ag/Tl2InGaSe4/C diodes presented by series resistance, barrier height and ideality factor upon light excitations make them promising for applications in optoelectronics as switches and photodetectors. Moreover, the alternating electrical signals analyses on the capacitance spectra displayed resonance -antiresonance oscillations in the frequency domain of 83-100 MHz. The resistance spectra also exhibited negative resistance effect in the range of 55-135 MHz. These features of the device make it suitable for use as microwave resonators and memory devices as well.