Qasrawı, Atef Fayez Hasan

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https://hdl.handle.net/20.500.14411/7716
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Qasrawi, Atef Fayez
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Doçent Doktor
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atef.qasrawi@atilim.edu.tr
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Department of Electrical & Electronics Engineering
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Former Staff
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Scholarly Output

222

Articles

218

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642/0

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0

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0

WoS Citation Count

1887

Scopus Citation Count

1907

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21

Scopus h-index

21

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0

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0

WoS Citations per Publication

8.50

Scopus Citations per Publication

8.59

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17

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0

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Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
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Author: Gasanly, N. M.Subject: microwave

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    Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Mgo/Gase0.5< Heterojunction as Photodiodes and Microwave Resonators
    (Ieee-inst Electrical Electronics Engineers inc, 2016) Qasrawi, Atef F.; Khanfar, Hazem K.; Gasanly, N. M.
    In this paper, a multifunctional operating optoelectronic device that suits visible light (VLC) and microwave communication systems is designed and characterized. The device which is composed of p-type MgO and n-type GaSe0.5S0.5 heterojunction is characterized by means of optical absorbance in the incident light energy (E) region of 3.5-1.1 eV, dark and illuminated current (I)-voltage (V) characteristics, and impedance spectra in the frequency range of 1M-1.8 GHz. Four types of lasers which generate light of wavelengths 406, 632, 850, and 1550 nm are used to excite the active region of the device. The device was also illuminated by non-monochromatic light. The incident light power was varied in the range of 1.12-10.17 mu W. It was observed that the heterojunction exhibits an optical energy bandgap (E-g) of 1.85 eV. For laser excitation with E > Eg, the photosensitivity (S) exceeds 67 while it is less than unity for excitations with E < Eg. These behaviors are assigned to the intrinsic and extrinsic nature of absorption, respectively. In addition, S increases as a result of energy barrier height lowering with increasing light power. On the other hand, when the device was excited with ac signal, the capacitance and impedance of the device displayed a resonance-antiresonance property associated with negative differential resistance and very high signal quality factor (10(3)) above 1.37 GHz. The bandwidth of the two resonance-antiresonance peaks is 319 and 12.6 MHz at 1.475 and 1.649 GHz, respectively. These results are attractive for using the heterojunction in VLC and microwave communication technologies.