Qasrawı, Atef Fayez Hasan

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https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
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WoS Researcher ID

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Scholarly Output

222

Articles

218

Views / Downloads

640/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1887

Scopus Citation Count

1906

WoS h-index

21

Scopus h-index

21

Patents

0

Projects

0

WoS Citations per Publication

8.50

Scopus Citations per Publication

8.59

Open Access Source

17

Supervised Theses

0

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JournalCount
Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
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Author: Erçelebi, ÇHas files: false

Scholarly Output Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Article
    Citation - WoS: 18
    Citation - Scopus: 18
    Growth, Electrical and Structural Characterization of Β-Gase Thin Films
    (Springer, 2003) Parlak, M; Qasrawi, AF; Erçelebi, Ç
    GaSe thin films were deposited onto the glass substrates kept at 200degrees and 300degreesC by the thermal evaporation of GaSe crystals under the pressure of 10(-5) Torr. X-ray analysis of the films revealed that films grown at 200. C are amorphous in nature while the films grown at 300degreesC are polycrystalline beta-GaSe. The temperature dependent electrical conductivity measurements in the region of 320-100 K for the films grown at 300degreesC showed that the transport mechanisms are the thermionic emission of charged carriers and the variable range hopping above and below 180 K, respectively. Space charge limited current (SCLC) studies have also been performed on these films through the current-voltage measurements at different temperatures and a dominant hole trap at 0.233 eV from the top of the valance band with a trap density of similar to1.6 x 10(11) cm(-3) is identified. (C) 2003 Kluwer Academic Publishers.
  • Thumbnail Image
    Article
    Citation - WoS: 20
    Citation - Scopus: 20
    Characterization of P-in2se3< Thin Films
    (Kluwer Academic Publ, 2001) Qasrawi, AF; Parlak, M; Erçelebi, Ç; Günal, I
    Indium selenide thin films were deposited onto glass substrates kept at 150 degreesC by thermal evaporation of alpha -In2Se3. Some of the films were annealed at 150 degreesC and 200 degreesC and they all were found to exhibit p-type conductivity without intentional doping. Scanning electron microscopy (SEM) established that the films have an atomic content of In51Se49. X-ray diffraction (XRD) indicated that the as-grown films were amorphous in nature and became polycrystalline \beta-In2Se3 films after annealing. The analysis of conductivity temperature-dependence measurements in the range 320-100 K revealed that thermal excitation and thermionic emission of the carriers are the predominant conduction mechanisms above 200 K in the amorphous and polycrystalline samples, respectively. The carrier transport below 200 K is due to variable range hopping in all the samples. Hall measurements revealed that the mobility of the polycrystalline films is limited by the scattering of the charged carriers through the grain boundaries above 200 K. (C) 2001 Kluwer Academic Publishers.