Qasrawı, Atef Fayez Hasan

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Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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WoS Researcher ID

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11

SUSTAINABLE CITIES AND COMMUNITIES
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14

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9

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AFFORDABLE AND CLEAN ENERGY
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This researcher does not have a Scopus ID.
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Scholarly Output

222

Articles

218

Views / Downloads

639/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1887

Scopus Citation Count

1907

WoS h-index

21

Scopus h-index

21

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0

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0

WoS Citations per Publication

8.50

Scopus Citations per Publication

8.59

Open Access Source

17

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0

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JournalCount
Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
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Scholarly Output Search Results

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  • Article
    Citation - WoS: 5
    Citation - Scopus: 6
    Structural, Optical, Dielectric and Electrical Properties of Al-Doped Znse Thin Films
    (Springer, 2019) Kayed, T. S.; Qasrawi, A. F.; Elsayed, Khaled A.
    In this work, the heavy aluminum doping effects on the compositional, structural, optical, dielectric and electrical properties of ZnSe thin films are investigated. It is observed that the Zn/Se compositional ratio increases with increasing Al content. The major cubic phase of ZnSe becomes more pronounced compared to the hexagonal phase. In addition, the presence of Al in the structure of ZnSe causes lattice constant contraction, decreased the grain size and increased both of the strain and defect density. Optically, the Al doping increased the light absorbability and widens both of the energy band gap and energy interbands which are present in the band gap of ZnSe films. Moreover, the Al doping into ZnSe lowers the high frequency dielectric constant and enhances the optical conductivity. On the other hand, the capacitance spectra which are studied in the frequency domain of 0.01-1.80GHz displayed negative capacitance effect associated with resonance-antiresonance phenomena upon doping of ZnSe with Al. Such enhancements in the physical properties of ZnSe that are achieved via Al doping make the zinc selenide thin films more appropriate for electronic and optoelectronic technological applications.