Qasrawı, Atef Fayez Hasan

Profile Picture
Profile URL
https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID

Sustainable Development Goals

This researcher does not have a Scopus ID.
This researcher does not have a WoS ID.
Scholarly Output

222

Articles

218

Views / Downloads

639/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1887

Scopus Citation Count

1907

WoS h-index

21

Scopus h-index

21

Patents

0

Projects

0

WoS Citations per Publication

8.50

Scopus Citations per Publication

8.59

Open Access Source

17

Supervised Theses

0

Google Analytics Visitor Traffic

JournalCount
Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
Current Page: 1 / 11

Scopus Quartile Distribution

Competency Cloud

GCRIS Competency Cloud

Filters

20191
Reset filters

Settings

Author: Alsabe, Ansam M.Subject: Aluminum -nanosandwiching

Scholarly Output Search Results

Now showing 1 - 1 of 1
  • Thumbnail Image
    Article
    Citation - WoS: 12
    Citation - Scopus: 14
    Engineering the Structural, Optical and Dielectric Properties of Znse Thin Films Via Aluminum Nanosandwiching
    (Elsevier Gmbh, 2019) Qasrawi, A. F.; Alsabe, Ansam M.
    In this work, two stacked layers of ZnSe thin films are nanosandwiched with aluminum slabs of variable thickness in the range of 10-100 nm. The films which are studied by the X-ray diffraction and ultra-violet visible light spectroscopy techniques exhibit interesting features presented by extension of the cubic lattice parameter, increase in the grain size and reduction in both of the microstrains and defect density. The Al nanosandwiching successfully engineered the energy band gap through narrowing it from 2.84 to 1.85 eV. In addition, the Al nanosandwiching is observed to form interbands that widens upon increasing the Al layer thickness. It also changed the electronic transition nature from direct allowed to direct forbidden type. Moreover, remarkable enhancement in the light absorbability by 796 times is observed near 1.72 eV for two stacked ZnSe layers nanosandwiched with Al slab of thickness of 100 nm. The dielectric constant is also increased three times and the dielectric tenability vary in the range of 3.0-1.2 eV. The nonlinearity in the dielectric spectra and the engineering of the band gap that become more pronounced in the presence of Al slabs make the ZnSe more attractive for nonlinear optical applications.