Qasrawı, Atef Fayez Hasan

Profile Picture
Profile URL
https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID

Sustainable Development Goals

NO POVERTY1
NO POVERTY
0
Research Products
ZERO HUNGER2
ZERO HUNGER
0
Research Products
GOOD HEALTH AND WELL-BEING3
GOOD HEALTH AND WELL-BEING
0
Research Products
QUALITY EDUCATION4
QUALITY EDUCATION
0
Research Products
GENDER EQUALITY5
GENDER EQUALITY
0
Research Products
CLEAN WATER AND SANITATION6
CLEAN WATER AND SANITATION
0
Research Products
AFFORDABLE AND CLEAN ENERGY7
AFFORDABLE AND CLEAN ENERGY
17
Research Products
DECENT WORK AND ECONOMIC GROWTH8
DECENT WORK AND ECONOMIC GROWTH
0
Research Products
INDUSTRY, INNOVATION AND INFRASTRUCTURE9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
0
Research Products
REDUCED INEQUALITIES10
REDUCED INEQUALITIES
0
Research Products
SUSTAINABLE CITIES AND COMMUNITIES11
SUSTAINABLE CITIES AND COMMUNITIES
0
Research Products
RESPONSIBLE CONSUMPTION AND PRODUCTION12
RESPONSIBLE CONSUMPTION AND PRODUCTION
0
Research Products
CLIMATE ACTION13
CLIMATE ACTION
0
Research Products
LIFE BELOW WATER14
LIFE BELOW WATER
0
Research Products
LIFE ON LAND15
LIFE ON LAND
0
Research Products
PEACE, JUSTICE AND STRONG INSTITUTIONS16
PEACE, JUSTICE AND STRONG INSTITUTIONS
1
Research Products
PARTNERSHIPS FOR THE GOALS17
PARTNERSHIPS FOR THE GOALS
0
Research Products
This researcher does not have a Scopus ID.
This researcher does not have a WoS ID.
Scholarly Output

226

Articles

222

Views / Downloads

87/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1984

Scopus Citation Count

2000

Patents

0

Projects

0

WoS Citations per Publication

8.78

Scopus Citations per Publication

8.85

Open Access Source

17

Supervised Theses

0

JournalCount
Crystal Research and Technology16
Journal of Electronic Materials15
physica status solidi (a)12
Materials Science in Semiconductor Processing11
Journal of Alloys and Compounds11
Current Page: 1 / 11

Scopus Quartile Distribution

Competency Cloud

GCRIS Competency Cloud

Filters

20181
Reset filters

Settings

Author: Abusaa, M.Subject: CdSe

Scholarly Output Search Results

Now showing 1 - 1 of 1
  • Thumbnail Image
    Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Dielectric and Optoelectronic Properties of Inse/Cds Heterojunctions
    (Springer, 2018) Abusaa, M.; Qasrawi, A. F.; Shehada, Sufyan R.
    The effect of an InSe substrate on the structural, optical and dielectric properties of CdS/CdSe heterojunctions prepared by physical vapor deposition technique under vacuum pressure of 10(-8) bar are reported. The structural analysis carried out by x-ray diffraction revealed a strained type of growth of the CdS/CdSe heterojunction onto the InSe along the axis of the hexagonal lattice. The lattice mismatches and strained nature of the heterojunctions associated with the InSe participation causes a quantum confinement that results in a red shift in the energy band gap, enhanced near infrared (IR) light absorbability, and valence band offsets of 0.62eV and 0.53eV for the InSe/CdS and CdS/CdSe interfaces, respectively. In addition, a pronounced enhancement in the real part of the dielectric constant by 2.5 times is observed at 1.25eV. Furthermore, the Durde-Lorentz modeling of the optical conductivity of the CdS/CdSe and InSe/CdS/CdSe reveals significant increases in the drift mobility values from 43.8cm(2)/Vs at the CdS/CdSe interface to 100.0cm(2/)Vs upon replacement of glass by an amorphous InSe substrate. The other optical conduction parameters including the free carrier scattering time at the femtosecond level, the plasmon frequency and the free carrier density are also improved accordingly. The photocurrent illumination intensity dependence for the studied system showed that the presence of InSe increases the photocurrent values and changes the recombination mechanism from sublinear at the surface to trap-assisted recombination. The smart feature of the InSe/CdS/CdSe system is that the structurally controlled quantum confinement results in having mobile photocarriers arising from the enhanced absorbability and large dielectric response in the IR region.