Işık, Mehmet

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Profile URL
https://hdl.handle.net/20.500.14411/8160
Name Variants
Mehmet, Işık
M.,Işık
Isik, Mehmet
Mehmet, Isik
I., Mehmet
I.,Mehmet
Işık,M.
Isik,M.
I.,Mehmet
M.,Isik
Işık, Mehmet
M., Isik
Isik, M.
Job Title
Profesör Doktor
Email Address
mehmet.isik@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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Scopus Author ID
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WoS Researcher ID

Sustainable Development Goals

2

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11

SUSTAINABLE CITIES AND COMMUNITIES
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14

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1

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6

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1

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5

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9

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16

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This researcher does not have a Scopus ID.
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Scholarly Output

173

Articles

169

Views / Downloads

442/794

Supervised MSc Theses

3

Supervised PhD Theses

0

WoS Citation Count

1806

Scopus Citation Count

1866

WoS h-index

20

Scopus h-index

20

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0

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0

WoS Citations per Publication

10.44

Scopus Citations per Publication

10.79

Open Access Source

11

Supervised Theses

3

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JournalCount
Optical Materials17
Physica B: Condensed Matter16
Journal of Luminescence15
Materials Science in Semiconductor Processing14
Journal of Materials Science: Materials in Electronics12
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    Article
    Citation - WoS: 5
    Citation - Scopus: 5
    Identification of Shallow Trap Centers in Inse Single Crystals and Investigation of Their Distribution: a Thermally Stimulated Current Spectroscopy
    (Elsevier, 2024) Isik, M.; Gasanly, N. M.
    Identification of trap centers in semiconductors takes great importance for improving the performance of electronic and optoelectronic devices. In the present study, we employed the thermally stimulated current (TSC) method within a temperature range of 10-280 K to explore trap centers in InSe crystal-a material with promising applications in next-generation devices. Our findings revealed the existence of two distinct hole trap centers within the InSe crystal lattice located at 0.06 and 0.14 eV. Through the leveraging the T-stop method, we offered trap distribution parameters of revealed centers. The results obtained from the experimental methodology employed to investigate the distribution of trap centers indicated that one of the peaks extended between 0.06 and 0.13 eV, while the other spanned from 0.14 to 0.31 eV. Notably, our research uncovers a remarkable variation in trap density, spanning one order of magnitude, for every 10 and 88 meV of energy variation. The results of our research present the characteristics of shallow trap centers in InSe, providing important information for the design and optimization of InSe-based optoelectronic devices.