Işık, Mehmet

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https://hdl.handle.net/20.500.14411/8160
Name Variants
Mehmet, Işık
M.,Işık
Isik, Mehmet
Mehmet, Isik
I., Mehmet
I.,Mehmet
Işık,M.
Isik,M.
I.,Mehmet
M.,Isik
Işık, Mehmet
M., Isik
Isik, M.
Job Title
Profesör Doktor
Email Address
mehmet.isik@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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11

SUSTAINABLE CITIES AND COMMUNITIES
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14

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6

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5

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9

INDUSTRY, INNOVATION AND INFRASTRUCTURE
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Scholarly Output

173

Articles

169

Views / Downloads

442/794

Supervised MSc Theses

3

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0

WoS Citation Count

1806

Scopus Citation Count

1866

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20

Scopus h-index

20

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WoS Citations per Publication

10.44

Scopus Citations per Publication

10.79

Open Access Source

11

Supervised Theses

3

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JournalCount
Optical Materials17
Physica B: Condensed Matter16
Journal of Luminescence15
Materials Science in Semiconductor Processing14
Journal of Materials Science: Materials in Electronics12
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Author: Guler, I.Subject: [No Keyword Available]

Scholarly Output Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Article
    Citation - WoS: 4
    Citation - Scopus: 4
    Optical Characterization of (tlins2)0.5< Crystal by Ellipsometry: Linear and Optical Constants for Optoelectronic Devices
    (Springer, 2023) Guler, I.; Isik, M.; Gasanly, N.
    TlInSSe [(TlInS2)(0.5)(TlInSe2)(0.5)] crystals have garnered significant attention as promising candidates for optoelectronic applications due to their exceptional optoelectrical characteristics. This study focused on investigating the linear and nonlinear optical properties of TlInSSe layered single crystals through ellipsometry measurements. The X-ray diffraction analysis revealed the presence of four distinct peaks corresponding to a monoclinic crystalline structure. In-depth analysis was conducted to examine the variations of refractive index, extinction coefficient, and complex dielectric function within the energy range of 1.25-6.15 eV. By employing derivative analysis of the absorption coefficient and utilizing the Tauc relation, the indirect and direct bandgap energies of TlInSSe crystals were determined to be 2.09 and 2.26 eV, respectively. Furthermore, this research paper presents findings on oscillator energy, dispersion energy, Urbach energy, zero and high frequency dielectric constants, plasma frequency, carrier density to effective mass ratio, nonlinear refractive index, and first-order and third-order nonlinear susceptibilities of TlInSSe crystals.
  • Thumbnail Image
    Article
    Citation - WoS: 4
    Citation - Scopus: 6
    Structural and Optical Properties of (tlins2)0.75< Thin Films Deposited by Thermal Evaporation
    (Springer, 2023) Guler, I.; Isik, M.; Gasanly, N.
    Layered semiconductor materials have become a serious research topic in recent years, thanks to their effective optical properties. In this article, the thin-film structure of Tl2In2S3Se [(TlInS2)(0.75)(TlInSe2)(0.25)] material with layered structure was grown by thermal evaporation method. The structural, morphological, and optical properties of the deposited thin films were examined. X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS) and atomic force microscopy (AFM) techniques were used to get information about structural and morphological properties of the thin films. XRD pattern presented well-defined peaks associated with monoclinic crystalline structure. The crystallite size, dislocation density, and lattice strain of the films were also obtained from the analyses of XRD pattern. EDS analysis showed that atomic compositional ratios of the Tl, In, S, and Se elements are consistent with chemical formula of Tl2In2S3Se. The optical characterization of thin film was performed using transmission and Raman spectroscopy techniques. Raman spectrum offered information about the vibrational modes of the thin film. The analyses of the transmission spectrum presented the indirect and direct band gap energies of the Tl2In2S3Se thin film as 2.23 and 2.52 eV, respectively. The further analyses on the absorption coefficient resulted in Urbach energy of 0.58 eV.