Repository logoGCRIS
  • English
  • Türkçe
  • Русский
Log In
New user? Click here to register. Have you forgotten your password?
Home
Communities
Entities
Browse GCRIS
Overview
GCRIS Guide
  1. Home
  2. Browse by Author

Browsing by Author "Yildirim, Murat"

Filter results by typing the first few letters
Now showing 1 - 1 of 1
  • Results Per Page
  • Sort Options
  • Loading...
    Thumbnail Image
    Article
    Citation - WoS: 19
    Citation - Scopus: 19
    A Study on the Dark and Illuminated Operation of Al/Si3< Schottky Photodiodes: Optoelectronic Insights
    (Springer Heidelberg, 2024) Surucu, Ozge; Yildiz, Dilber Esra; Yildirim, Murat
    This work extensively investigates the operation of an Al/ Si3N4/p-Si Schottky-type photodiode under dark and varying illumination intensities. The photodiode is fabricated by employing the metal-organic chemical vapor deposition (MOCVD) method. A thorough electrical characterization is performed at room temperature, encompassing measurements of current-voltage (I-V), current-time (I-t), capacitance-time (C-t), and conductance time (G-t). The photodiode's rectification factor and reverse bias area increased under illumination. The relationship between light power density, barrier height, and diode ideality factor is found. The study also found a strong correlation between light intensity and applied voltage on series resistance (R-s) and shunt resistance (R-sh). R-s values are calculated using Cheung's functions, revealing the diode's resistance behavior. The study also examines the photodiode's photoconductivity and photoconductance, finding a non-linear relationship between photocurrent and illumination intensity, suggesting bimolecular recombination. Calculated photosensitivity (K), responsivity (R), and detectivity (D*) values show the device's light response effectiveness, but efficiency decreases at higher illumination intensities. Transient experiments indicate stable and reproducible photocurrent characteristics, revealing photogenerated charge temporal evolution. This study provides a complete understanding of the Al/Si3N4/p-Si Schottky photodiode's behavior under different illumination intensities. The findings advance optoelectronic device knowledge and enable their use in advanced technologies.
Repository logo
Collections
  • Scopus Collection
  • WoS Collection
  • TrDizin Collection
  • PubMed Collection
Entities
  • Research Outputs
  • Organizations
  • Researchers
  • Projects
  • Awards
  • Equipments
  • Events
About
  • Contact
  • GCRIS
  • Research Ecosystems
  • Feedback
  • OAI-PMH
OpenAIRE Logo
OpenDOAR Logo
Jisc Open Policy Finder Logo
Harman Logo
Base Logo
OAI Logo
Handle System Logo
ROAR Logo
ROARMAP Logo
Google Scholar Logo

Log in to GCRIS Dashboard

Powered by Research Ecosystems

  • Privacy policy
  • End User Agreement
  • Feedback