Performance of the Yb/<i>n< Tunneling Barriers

dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.contributor.author Qasrawi, A. F.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:27:26Z
dc.date.available 2024-07-05T15:27:26Z
dc.date.issued 2018
dc.department Atılım University en_US
dc.department-temp [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin 11181, Palestine; [Qasrawi, A. F.] Atilim Univ, Fac Engn, TR-06836 Ankara, Turkey en_US
dc.description Qasrawi, Atef Fayez/0000-0001-8193-6975 en_US
dc.description.abstract In this article, the design and performance of the CdSe which are deposited onto thin films of Yb metal is reported and discussed. The thin films of CdSe which are deposited by the physical vapor deposition technique are observed to exhibit slightly deformed hexagonal polycrystalline nature with excess amount of Cd as confirmed by the X-ray, energy dispersive X-ray spectroscopy and scanning electron microscopy techniques. The n-type CdSe is also found to form a Schottky barrier of tunneling type when sandwiched between Yb and carbon. The quantum mechanical tunneling mechanism in this device which was tested and modeled in the frequency domain of 10-150 MHz is found to exhibit average intersite separations of similar to 5 nm. The tunneling device exhibited a widening in the depletion region associated with significantly large capacitance tunability in the studied frequency domain. On the other hand, as an optoelectronic device, the Yb/n-CdSe/C Schottky diode exhibited a responsivity of similar to 0.10 NW, photosensitivity of 6.5 x 10(4) and external quantum efficiency of 54% when biased with 1.0 V and exposed to laser light of wavelength of 406 nm. en_US
dc.description.sponsorship Arab American University, Jenin, Palestine; DSR en_US
dc.description.sponsorship This project was funded by the Deanship of Scientific Research at Arab American University, Jenin, Palestine. The author, therefore, acknowledge with thanks the DSR for technical and financial support. en_US
dc.identifier.citationcount 3
dc.identifier.doi 10.1166/jno.2018.2379
dc.identifier.endpage 1498 en_US
dc.identifier.issn 1555-130X
dc.identifier.issn 1555-1318
dc.identifier.issue 10 en_US
dc.identifier.startpage 1493 en_US
dc.identifier.uri https://doi.org/10.1166/jno.2018.2379
dc.identifier.uri https://hdl.handle.net/20.500.14411/2654
dc.identifier.volume 13 en_US
dc.identifier.wos WOS:000450407300010
dc.identifier.wosquality Q4
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Amer Scientific Publishers en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.subject CdSe en_US
dc.subject Excess Cd en_US
dc.subject Tunneling en_US
dc.subject Photoconductivity en_US
dc.title Performance of the Yb/<i>n< Tunneling Barriers en_US
dc.type Article en_US
dc.wos.citedbyCount 3
dspace.entity.type Publication
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