Performance of the Yb/<i>n</i>-CdSe/C Tunneling Barriers
dc.authorid | Qasrawi, Atef Fayez/0000-0001-8193-6975 | |
dc.authorwosid | Qasrawi, Atef Fayez/R-4409-2019 | |
dc.contributor.author | Qasrawı, Atef Fayez Hasan | |
dc.contributor.other | Department of Electrical & Electronics Engineering | |
dc.date.accessioned | 2024-07-05T15:27:26Z | |
dc.date.available | 2024-07-05T15:27:26Z | |
dc.date.issued | 2018 | |
dc.department | Atılım University | en_US |
dc.department-temp | [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin 11181, Palestine; [Qasrawi, A. F.] Atilim Univ, Fac Engn, TR-06836 Ankara, Turkey | en_US |
dc.description | Qasrawi, Atef Fayez/0000-0001-8193-6975 | en_US |
dc.description.abstract | In this article, the design and performance of the CdSe which are deposited onto thin films of Yb metal is reported and discussed. The thin films of CdSe which are deposited by the physical vapor deposition technique are observed to exhibit slightly deformed hexagonal polycrystalline nature with excess amount of Cd as confirmed by the X-ray, energy dispersive X-ray spectroscopy and scanning electron microscopy techniques. The n-type CdSe is also found to form a Schottky barrier of tunneling type when sandwiched between Yb and carbon. The quantum mechanical tunneling mechanism in this device which was tested and modeled in the frequency domain of 10-150 MHz is found to exhibit average intersite separations of similar to 5 nm. The tunneling device exhibited a widening in the depletion region associated with significantly large capacitance tunability in the studied frequency domain. On the other hand, as an optoelectronic device, the Yb/n-CdSe/C Schottky diode exhibited a responsivity of similar to 0.10 NW, photosensitivity of 6.5 x 10(4) and external quantum efficiency of 54% when biased with 1.0 V and exposed to laser light of wavelength of 406 nm. | en_US |
dc.description.sponsorship | Arab American University, Jenin, Palestine; DSR | en_US |
dc.description.sponsorship | This project was funded by the Deanship of Scientific Research at Arab American University, Jenin, Palestine. The author, therefore, acknowledge with thanks the DSR for technical and financial support. | en_US |
dc.identifier.citation | 3 | |
dc.identifier.doi | 10.1166/jno.2018.2379 | |
dc.identifier.endpage | 1498 | en_US |
dc.identifier.issn | 1555-130X | |
dc.identifier.issn | 1555-1318 | |
dc.identifier.issue | 10 | en_US |
dc.identifier.startpage | 1493 | en_US |
dc.identifier.uri | https://doi.org/10.1166/jno.2018.2379 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14411/2654 | |
dc.identifier.volume | 13 | en_US |
dc.identifier.wos | WOS:000450407300010 | |
dc.identifier.wosquality | Q4 | |
dc.institutionauthor | Qasrawi, A. F. | |
dc.language.iso | en | en_US |
dc.publisher | Amer Scientific Publishers | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | CdSe | en_US |
dc.subject | Excess Cd | en_US |
dc.subject | Tunneling | en_US |
dc.subject | Photoconductivity | en_US |
dc.title | Performance of the Yb/<i>n</i>-CdSe/C Tunneling Barriers | en_US |
dc.type | Article | en_US |
dspace.entity.type | Publication | |
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