Browsing by Author "Guseinov, A."
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Article Citation Count: 3Characteristic features of thermoluminescence in neodymium-doped gallium sulfide(Wiley, 2018) Işık, Mehmet; Isik, M.; Ahmedova, F.; Guseinov, A.; Gasanly, N.; Department of Electrical & Electronics EngineeringThe thermoluminescence (TL) of neodymium-doped gallium sulfide (GaS:Nd) single crystals was measured from 10 K to room temperature with various heating rates between 0.2 and 1.0 K/sec. Two peaks centered at 70.9 K and 116.0 K were observed when using a heating rate of 0.8 K/sec. Initial rise and curve fitting methods were used to obtain information on trap activation energies. Activation energies of 94 and 216 meV were found for two analyzable peaks. The heating rate dependencies of TL intensities revealed that one of the observed peaks showed normal behavior according to the one trap-one recombination model, whereas the other model showed anomalous heating rate behavior. TL experiments were also carried out at different illumination temperatures from 10 to 32 K; maximum peak temperature remained almost the same at various illumination temperatures. This behavior indicated that the revealed trapping centers are single, discrete levels. The TL glow curves of undoped GaS crystals were also investigated and the effect of Nd doping on the TL characteristics of crystals is discussed in the manuscript.Article Citation Count: 0Optical constants and critical point energies of (AgInSe2)0.75-(In2Se3)0.25 single crystals(Springer, 2020) Işık, Mehmet; Nasser, H.; Guseinov, A.; Gasanly, N. M.; Department of Electrical & Electronics EngineeringAgInSe2 and In2Se3 are two attractive semiconducting materials for various technological applications especially for photovoltaic applications. In the present study, structural and optical properties of (AgInSe2)(x)-(In2Se3)(1-x) crystals for composition of x = 0.75 corresponding to chemical formula of Ag3In5Se9 were characterized by X-ray diffraction, energy-dispersive spectroscopy, room temperature transmission, and ellipsometry experiments. The transmittance spectrum was analyzed to reveal energy band gap. The derivative spectrophotometry analysis resulted in band gap energy of 1.22 eV. The spectra of complex dielectric function, refractive index and extinction coefficient were presented between 1.6 and 6.2 eV from the outcomes of ellipsometry analyses. Critical point energies have been determined using the derivative analyses of dielectric function. Five critical points at 2.70, 3.30, 4.05, 4.73, and 5.42 eV were revealed from the analyses. Crystal structure and atomic composition in semiconducting compound were also reported in the present work. The obtained results were compared with those reported for constituent compounds.Article Citation Count: 3Optical properties of Cu3In5S9 single crystals by spectroscopic ellipsometry(Elsevier Gmbh, 2018) Işık, Mehmet; Nasser, H.; Ahmedova, F.; Guseinov, A.; Gasanly, N. M.; Department of Electrical & Electronics EngineeringCu3In5S9 single crystals were investigated by structural methods of x-ray diffraction and energy dispersive spectroscopy and optical techniques of ellipsometry and reflection carried out at room temperature. The spectral dependencies of optical constants; dielectric function, refractive index and extinction coefficient, were plotted in the range of 1.2-6.2 eV from ellipsometric data. The spectra of optical constants obtained from ellipsometry analyses and reflectance spectra presented a sharp change around 1.55 and 1.50 eV, respectively, which are associated with band gap energy of the crystal. The critical point (interband transition) energies were also found from the analyses of second-energy derivative of real and imaginary components of dielectric function. The analyses indicated the presence of four critical points at 2.73, 135, 4.04 and 4.98 eV.