Optical properties of Cu<sub>3</sub>In<sub>5</sub>S<sub>9</sub> single crystals by spectroscopic ellipsometry

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Date

2018

Authors

Işık, Mehmet
Nasser, H.
Ahmedova, F.
Guseinov, A.
Gasanly, N. M.

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Elsevier Gmbh

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

Cu3In5S9 single crystals were investigated by structural methods of x-ray diffraction and energy dispersive spectroscopy and optical techniques of ellipsometry and reflection carried out at room temperature. The spectral dependencies of optical constants; dielectric function, refractive index and extinction coefficient, were plotted in the range of 1.2-6.2 eV from ellipsometric data. The spectra of optical constants obtained from ellipsometry analyses and reflectance spectra presented a sharp change around 1.55 and 1.50 eV, respectively, which are associated with band gap energy of the crystal. The critical point (interband transition) energies were also found from the analyses of second-energy derivative of real and imaginary components of dielectric function. The analyses indicated the presence of four critical points at 2.73, 135, 4.04 and 4.98 eV.

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Gasanly, Nizami/0000-0002-3199-6686; Nasser, Hisham/0000-0001-5122-001X; Gasanly, Nizami/0000-0002-3199-6686

Keywords

Ellipsometry, Optical properties, Semiconductors

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3

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Volume

171

Issue

Start Page

77

End Page

82

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