AlGarni, Sabah E.Qasrawı, Atef Fayez HasanQasrawi, A. F.Department of Electrical & Electronics Engineering2024-07-052024-07-05202031516-14391980-537310.1590/1980-5373-MR-2020-04492-s2.0-85097335577https://doi.org/10.1590/1980-5373-MR-2020-0449https://hdl.handle.net/20.500.14411/3401Qasrawi, Atef Fayez/0000-0001-8193-6975In this study, the design and characterization of CdO/InSe thin film transistors (TFT) that are grown onto Au substrates are investigated. The devices are also subjected to a vacuum annealing process at 300 degrees C to enhance the structure and electrical performance. It was observed that the growth of polycrystalline monoclinic In6Se7 phase of InSe is preferred at this annealing temperature when coated onto Au/CdO substrates. Electrically, noisy negative capacitance effect accompanied with resonance-antiresonance phenomena is observed in the capacitance spectra of the as prepared TFT devices. The annealing of the TFT devices reduced the noise in the capacitance, conductance, impedance, and reflection coefficient and return loss spectral responses. The heat treated TFT devices displayed low bandpass, high bandpass and bandstop filter characteristics in the studied frequency domain (0.01-1.80 GHz) indicating the applicability of these devices as radio wave-microwave resonators.eninfo:eu-repo/semantics/openAccessCdO/InSeannealingthin film transistorband filterArticleQ4Q3236WOS:000605648600001