Işık, MehmetIsik, M.Gasanly, N. M.Turan, R.Department of Electrical & Electronics Engineering2024-07-052024-07-05201320925-838810.1016/j.jallcom.2012.09.1032-s2.0-84868247276https://doi.org/10.1016/j.jallcom.2012.09.103https://hdl.handle.net/20.500.14411/439Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686Spectroscopic ellipsometry measurements were carried out on Tl2GaInS4 layered crystals for orientations of electric field vector, parallel (E//c*) and perpendicular (E perpendicular to c*) to optical axis c*. The measurements were performed in the 1.2-6.2 eV spectral range at room temperature. The real and imaginary components of the pseudodielectric function, pseudorefractive index and pseudoextinction coefficient were calculated from the analysis of ellipsometric data. The energies of interband transitions (critical points) have been found from the least-square fitting of the second derivative spectra of the pseudodielectric function. The results indicated five each interband transition structures for E//c* and E perpendicular to c* configurations. The obtained critical point energies were assigned tentatively to interband transitions using the available electronic energy band structure given in literature. (C) 2012 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessSemiconductorsEllipsometryRefractive indexArticleQ1549179183WOS:000312109200031