Isik, MehmetGasanly, NizamiDepartment of Electrical & Electronics Engineering2024-07-052024-07-0520150921-45261873-213510.1016/j.physb.2015.09.0162-s2.0-84941892283https://doi.org/10.1016/j.physb.2015.09.016https://hdl.handle.net/20.500.14411/794Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686Agln(5)S(8) crystals grown by Bridgman method were characterized for optical properties by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficient were obtained from ellipsometiy experiments carried out in the 1.2-6.2 eV range. Direct band gap energy of 1.84 eV was found from the analysis of absorption coefficient vs. photon energy. The oscillator energy, dispersion energy and zero-frequency refractive index, high-frequency dielectric constant values were found from the analysis of the experimental data using Wemple-DiDomenico and Spitzer-Fan models. Crystal structure and atomic composition ratio of the constituent elements in the AgIn5S8 crystal were revealed from structural characterization techniques of X-ray diffraction and energy dispersive spectroscopy. (C) 2015 Elsevier B.V. All rights reservedeninfo:eu-repo/semantics/closedAccessSemiconductorsOptical propertiesEllipsometryArticle478127130WOS:0003641664000239