Isik, M.Gullu, H. H.Department of Electrical & Electronics Engineering2024-07-052024-07-05201800587-42461898-794X10.12693/APhysPolA.133.11192-s2.0-85049600234https://doi.org/10.12693/APhysPolA.133.1119https://hdl.handle.net/20.500.14411/2728Dark-conductivity and photoconductivity properties of thermally evaporated Ga-In-Se (GIS) thin films were investigated in the temperature range of 80-430 K. All measurements were performed on as-grown and annealed GIS thin films at 300 and 400 degrees C to get information about the effect of the annealing temperature on the conductivity properties. Room temperature conductivity was obtained as 1.8 x 10(-8) Omega(-1) cm(-1) for as-grown films and increased to 3.6 x 10(-4) Omega(-1) cm(-1) for annealed films at 400 degrees C. Analysis of the dark-conductivity data of as-grown films revealed nearly intrinsic type of conductivity with 1.70 eV band gap energy. Temperature dependent dark conductivity curves exhibited two regions in the 260-360 and 370-430 K for both of annealed GIS films. Conductivity activation energies were found as 0.05, 0.16 and 0.05, 0.56 eV for films annealed at temperatures of 300 and 400 degrees C, respectively. The dependence of photoconductivity on illumination intensity was also studied in the range from 17 to 113 mW/cm(2).eninfo:eu-repo/semantics/openAccess`ArticleQ4133511191123WOS:000436603100001