Al Harbi, S. R.Qasrawi, A. F.Department of Electrical & Electronics Engineering2024-07-052024-07-0520200018-93831557-964610.1109/TED.2020.29681452-s2.0-85080943076https://doi.org/10.1109/TED.2020.2968145https://hdl.handle.net/20.500.14411/3120Qasrawi, Atef Fayez/0000-0001-8193-6975In this article, Au/As2Se3/Ag/As2Se3/Yb Schottky barriers are formed and characterized. The devices prepared by the thermal evaporation technique under vacuum pressure of 10(-5) mbar are observed to exhibit metal-induced crystallization process when coated onto Au substrates. Electrically, the arsenic selenide-based Schottky devices exhibited typical metal-oxide-semiconductor (MOS) characteristics with a built-in potential of 0.17 eV. The device shows resonance-antiresonance switching, negative capacitance (NC) effect, and high to low conductance switching features in the frequency domain of 10-1800 MHz. In addition, measurement of the impedance, amplitude of reflection coefficient, return loss (L-r), and voltage standing wave ratio (VSWR) spectra in the same domain have shown that the Au/As2Se3/Ag/As2Se3/Yb Schottky barriers display band stop features at 1180 MHz. The L-r and VSWR values at this critical frequency are 29.1 dB and 1.1, respectively. The electrical characterizations of the Au/As2Se3/Ag/As2Se3/Yb MOS devices have confirmed their suitability for use as parasitic capacitance cancellers, noise reducers, and as switching clock with selective switching time scales of switching delay time less than 0.40 ns.eninfo:eu-repo/semantics/closedAccessAs2Se3/Ag/As2Se3electronic switchmicrowave cavitynegative capacitance (NC)resonanceArticleQ267313051309WOS:0005195938000812