Qasrawı, Atef Fayez HasanQasrawi, AFGasanly, NMDepartment of Electrical & Electronics Engineering2024-07-052024-07-05200290232-130010.1002/1521-4079(200206)37:6<5872-s2.0-0036307274https://doi.org/10.1002/1521-4079(200206)37:6<587https://hdl.handle.net/20.500.14411/1119Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4x10(17) and 4.1x10(17) cm(-1), respectively, and an electron effective mass of 0.41 m(o). The Hall mobility is limited by the electron-phonon short-range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron-phonon short-range interactions scattering mobility analysis reveals an electron-phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Angstrom.eninfo:eu-repo/semantics/closedAccessGaS0.5Se0.5 crystalsresistivityHall mobilityscattering mechanismsArticleQ3376587594WOS:000176200200007