Qasrawı, Atef Fayez HasanQasrawi, A. F.Gasanly, N. M.Department of Electrical & Electronics Engineering2024-07-052024-07-05200720232-130010.1002/crat.2007109092-s2.0-34547791352https://doi.org/10.1002/crat.200710909https://hdl.handle.net/20.500.14411/891Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686The room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl2InGaTe4 crystals are reported for the first time. The X-ray diffraction technique has revealed that Tl(2)lnGaTe(4) is a single phase crystal of tetragonal body-centered structure belonging to the D-4H(18) - I4mcm space group. A Debye temperature of 124 K is calculated from the results of the X-ray data. The current-voltage measurements have shown the existence of the switching property of the crystals at a critical voltage of 80 V. The dark electrical resistivity and Hall effect measurements indicated the n-type conduction with an electrical resistivity, electron density and Hall mobility of 2.49x 10(3) Omega cm, 4.76x 10(12) cm(-3) and 527 cm V-2(-1) s(-1), respectively. The photosensitivity measurements on the crystal revealed that, the variation of photocurrent with illumination intensity is linear, indicating the domination of monomolecular recombination at room temperature. Moreover, the spectral distribution of the photocurrent allowed the determination of the energy band gap of the crystal studied as 0.88 cV.eninfo:eu-repo/semantics/closedAccessX-ray diffractionresistivitymobilityphotoconductivityelectronic transportArticleQ3428807811WOS:000248667400010