Qasrawi,A.F.Qasrawı, Atef Fayez HasanOmar,A.Department of Electrical & Electronics Engineering2024-10-062024-10-062020101842-2403[SCOPUS-DOI-BELIRLENECEK-48]2-s2.0-85082680916https://hdl.handle.net/20.500.14411/9526In this work, the structural and electrical properties of stacked layers of Cu2O that comprises indium slabs in its structure are reported. The stacked layers which are coated onto glass and Au substrates under vacuum pressure of 10-5 mbar are characterized by the X-ray diffraction and impedance spectrometry techniques. While the Cu2O/Cu2O (CC) layers exhibited amorphous nature of growth, those which contained indium slabs (CIC) displayed weak crystallinity. The insertion of indium slabs between stacked layers of cuprous oxide highly increased the electrical resistivity and shifted the acceptor level closer to the valance band edge. In addition, the analyses of the conductance and capacitance spectra in the frequency domain of 0.01-1.0 GHz have shown that these two physical parameters are strongly affected by the insertion of indium slabs and by surface deformation effects. The capacitance spectra showed negative capacitance effect (NC) in all the studied frequency domain. The NC effects become less pronounced in the CIC samples owing to the changes in the polarization mechanism. The feature of NC effects make both of the CC and CIC samples more appropriate for electronic and telecommunication technology as it can be used in amplifiers to enhance he gain, as parasitic cancellers and as noise reducers. © 2020, S.C. Virtual Company of Phisics S.R.L. All rights reserved.eninfo:eu-repo/semantics/closedAccessCu₂O/In/Cu₂ONegative capacitanceNoise reductionResistivityStacked layersArticleQ4Q41628388