Isik, M.Yildirim, T.Gasanly, N. M.Department of Electrical & Electronics Engineering2024-07-052024-07-05201600587-42461898-794X10.12693/APhysPolA.129.11652-s2.0-84976476332https://doi.org/10.12693/APhysPolA.129.1165https://hdl.handle.net/20.500.14411/503Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686Thermoluminescence properties of TlGaSeS layered single crystals were investigated in the temperature range of 280-720 K. Thermoluminescence glow curve exhibited three peaks with maximum temperatures of approximate to 370, 437, and 490 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers. All applied methods resulted with energies around 0.82, 0.91, and 0.99 eV. Dose dependence of the thermoluminescence intensity was also examined for the doses in the range of 0.7-457.6 Gy. Peak maximum intensity of the observed peak around 370 K showed an increase up to a certain dose and then a decrease at higher doses. This non-monotonic dose dependence was discussed under the light of a reported model in which different kinds of competition between radiative and nonradiative recombination centers during excitation or heating stages of the thermoluminescence process are explained.eninfo:eu-repo/semantics/openAccess[No Keyword Available]ArticleQ4129611651168WOS:000379821800016