Qasrawi, AFKayed, TSErcan, IDepartment of Electrical & Electronics EngineeringMathematics2024-07-052024-07-0520040921-510710.1016/j.mseb.2004.07.0022-s2.0-4344710177https://doi.org/10.1016/j.mseb.2004.07.002https://hdl.handle.net/20.500.14411/1158Ercan, ismail/0000-0001-6490-3792; Qasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166AgIn5S8 thin films are deposited on glass substrates, kept at 300 K, by thermal evaporation of AgIn5S8 single crystals under the pressure of 10-5 Torr. The X-ray fluorescence analysis revealed that the films have a weight percentage of similar to11.5% Ag, 61.17% In, and 27.33% S which corresponds to 1:5:8 stoichiometric composition. X-ray analysis of the films reveals the polycrystalline nature of the films. The lattice parameter (a) of the films was calculated to be 10.784(5) Angstrom. The dark n-type electrical conductivity of the films was measured in the temperature range of 30-350 K. The conductivity data analysis shows that the thermionic emission of the charge carriers having activation energies of 147 and 224 meV in the temperature ranges of 130-230 and 240-350 K, respectively, are the dominant transport mechanism in the films. The variable range hopping transport mechanism is dominant below 130 K. The room temperature photocurrent-photon energy dependency predicts a band gap of 1.91 eV of the films. The illumination intensity-photocurrent dependency measured in the intensity range of 13-235 W cm(-2) reveals monomolecular recombination (linear) in the films and bimolecular recombination (sublinear) at the film surface corresponding to low and high applied illumination intensities, respectively. The time-dependant photocurrent measured at fixed illumination intensity reveals a response time of 0.85, 2.66 and 10.0 s in the time periods of 0-0.5, 0.5-1.0, and 1.0-10.0 s, respectively. (C) 2004 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessthin filmternaryAgIn5S8conductivityX-rayphotocurrentspectraArticleQ211317378WOS:00022405000001325