Qasrawi, A. F.Alsabe, Ansam M.Department of Electrical & Electronics Engineering2024-07-052024-07-0520190030-40261618-133610.1016/j.ijleo.2019.1632952-s2.0-85071313121https://doi.org/10.1016/j.ijleo.2019.163295https://hdl.handle.net/20.500.14411/3464Qasrawi, Atef Fayez/0000-0001-8193-6975In this work, two stacked layers of ZnSe thin films are nanosandwiched with aluminum slabs of variable thickness in the range of 10-100 nm. The films which are studied by the X-ray diffraction and ultra-violet visible light spectroscopy techniques exhibit interesting features presented by extension of the cubic lattice parameter, increase in the grain size and reduction in both of the microstrains and defect density. The Al nanosandwiching successfully engineered the energy band gap through narrowing it from 2.84 to 1.85 eV. In addition, the Al nanosandwiching is observed to form interbands that widens upon increasing the Al layer thickness. It also changed the electronic transition nature from direct allowed to direct forbidden type. Moreover, remarkable enhancement in the light absorbability by 796 times is observed near 1.72 eV for two stacked ZnSe layers nanosandwiched with Al slab of thickness of 100 nm. The dielectric constant is also increased three times and the dielectric tenability vary in the range of 3.0-1.2 eV. The nonlinearity in the dielectric spectra and the engineering of the band gap that become more pronounced in the presence of Al slabs make the ZnSe more attractive for nonlinear optical applications.eninfo:eu-repo/semantics/closedAccessAluminum -nanosandwichingZnSeOpticalDielectricArticleQ2198WOS:0004944802000509