Sürücü, ÖzgeSurucu, GokhanBal, ErsinGencer, AysenurParlak, MehmetSurucu, OzgeElectrical-Electronics Engineering2024-07-052024-07-05202400167-577X1873-497910.1016/j.matlet.2024.1362962-s2.0-85187675598https://doi.org/10.1016/j.matlet.2024.136296https://hdl.handle.net/20.500.14411/2288SURUCU, Gokhan/0000-0002-3910-8575; SURUCU, Özge/0000-0002-8478-1267This study investigates novel thin-film solar cells featuring CuSbSe2 (CASe) with ZnSnO and ZnMgO windows in the layer superstrate structure. For glass/ITO/ZnMgO/CASe/Cu + Au, the J-V measurements reveal a shortcircuit current density (Jsc) of 19.4 mA/cm2, an open-circuit voltage (Voc) of 0.28 Volts, a fill factor (FF) of 39.14 %, and a power conversion efficiency (eta) of 2.13 %. Similarly, glass/ITO/ZnSnO/CASe/Cu + Au exhibits Jsc around 19.6 mA/cm2, Voc around 0.31 Volts, FF around 40 %, and eta of 2.43 %. This paper is a pioneering contribution, introducing novel thin-film solar cells with a distinctive superstrate structure utilizing CASe in conjunction with ZnSnO and ZnMgO windows. The comprehensive study presents the first-ever characterization and performance evaluation of these innovative configurations, shedding light on their unique potential in advancing sustainable solar energy technology.eninfo:eu-repo/semantics/closedAccessThin FilmsPhysical vapor depositionEnergy storage and conversionPerformance analysis of CuSbSe2 thin-film solar cells with Cd-free window layersArticleQ2Q2363WOS:001221000000001