Sürücü, ÖzgeDelice, S.Isik, M.Işık, MehmetGullu, H. H.Terlemezoglu, M.Güllü, Hasan HüseyinSurucu, O. BayrakliGasanly, N. M.Parlak, M.Electrical-Electronics EngineeringDepartment of Electrical & Electronics Engineering2024-07-052024-07-05202081369-80011873-408110.1016/j.mssp.2020.1050832-s2.0-85082121091https://doi.org/10.1016/j.mssp.2020.105083https://hdl.handle.net/20.500.14411/3063parlak, mehmet/0000-0001-9542-5121; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Terlemezoglu, Makbule/0000-0001-7912-0176; SURUCU, Özge/0000-0002-8478-1267; Delice, Serdar/0000-0001-5409-6528; Isik, Mehmet/0000-0003-2119-8266Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy and scanning electron microscopy methods were used for structural characterization while temperature-dependent transmission measurements carried out at various temperatures in between 10 and 300 K were accomplished for optical investigations. X-ray diffraction pattern of studied composition presented peaks at positions which are between those of SnSe2 and SnS2. Transmittance spectra recorded at all applied temperatures were analyzed using well-known Tauc relation. Analyses revealed the direct band gap energy value of SnSSe thin films as 1.75 eV at room temperature. Change of band gap energy as a response to varying temperature were discussed in the study by utilizing Varshni relation. It was shown that variation of gap energy values was well-matched with the Varshni's empirical formula. Energy band gap at absolute zero and rate of change of band gap with temperature were found to be 1.783 eV and -2.1 x 10(-4) eV K-1, respectively.eninfo:eu-repo/semantics/closedAccessSnS2SnSe2Thin filmsOptical propertiesArticleQ2Q1114WOS:000535462600016