Gullu, H. H.Surucu, O.Terlemezoglu, M.Isik, M.Ercelebi, C.Gasanly, N. M.Parlak, M.Electrical-Electronics EngineeringDepartment of Electrical & Electronics Engineering2024-07-052024-07-05202040040-609010.1016/j.tsf.2020.1379412-s2.0-85081653739https://doi.org/10.1016/j.tsf.2020.137941https://hdl.handle.net/20.500.14411/3138Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; SURUCU, Özge/0000-0002-8478-1267; parlak, mehmet/0000-0001-9542-5121; Terlemezoglu, Makbule/0000-0001-7912-0176; Isik, Mehmet/0000-0003-2119-8266; Gullu, Hasan Huseyin/0000-0001-8541-5309In the present work, CuZnSe2 (CZSe) thin films were co-deposited by magnetron sputtering of ZnSe and Cu targets. The structural analyses resulted in the stoichiometric elemental composition and polycrystalline nature without secondary phase contribution in the film structure. Optical and electrical properties of CZSe thin films were investigated using temperature-dependent optical transmission and electrical conductivity measurements. The band gap energy values were obtained using transmittance spectra under the light of expression relating absorption coefficient to incident photon energy. Band gap energy values were found in decreasing behavior from 2.31 to 2.27 eV with increase in temperature from 10 to 300 K. Temperature-band gap dependency was evaluated by Varshni and O'Donnell models to detail the optical parameters of the thin films. The experimental dark and photoconductivity values were investigated by thermionic emission model over the grain boundary potential. Room temperature conductivity values were obtained in between 0.91 and 4.65 ( x 10(-4) Omega(-1)cm(-1)) under various illumination intensities. Three different linear conductivity regions were observed in the temperature dependent profile. These linear regions were analyzed to extract the activation energy values.eninfo:eu-repo/semantics/closedAccessThin filmTemperature effectOptical propertiesPhotoconductivityConference ObjectQ3701WOS:000525745900021