Alharbi, Seham ReefQasrawi, Atef FayezDepartment of Electrical & Electronics Engineering2024-07-052024-07-0520191862-63001862-631910.1002/pssa.2018009772-s2.0-85061616320https://doi.org/10.1002/pssa.201800977https://hdl.handle.net/20.500.14411/2758Qasrawi, Atef Fayez/0000-0001-8193-6975;In this article, the authors discuss the growth nature, the structural, optical and dielectric properties of CuSe thin films deposited onto MoO3 substrate. The films are studied by the X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and ultraviolet-visible light spectroscopy techniques. CuSe thin films are observed to exhibit strained nature of growth when grown onto MoO3 amorphous substrates. Optically, the MoO3/CuSe films are found to exhibit conduction (Delta Ec) and valence (Delta Ev) band offsets of values of 3.70 and 3.42 eV, respectively. In addition, a remarkable increase in the absorbability (R lambda) of MoO3 by 72 times at 3.0 eV is obtained as a result of coating it with CuSe. The Delta Ec, Delta Ev, and R lambda values are significantly high and nominate the MoO3/CuSe interfaces for use in many optoelectronic applications. In addition, the dielectric analysis shows that the MoO3/CuSe heterojunction exhibit optical conductivity parameters that make it suitable for use in optical communications. Particularly, the Drude-Lorentz modeling of the imaginary part of the dielectric constant for the MoO3/CuSe interfaces displays mobility and plasmon frequency values of 7.76 cm(2) V-1 s(-1) and 3.78 GHz, respectively. The obtained plasmon frequency values indicate the applicability of this device in microwave technology.eninfo:eu-repo/semantics/closedAccessCuSedielectricMoO3optical conductivityX-rayArticle