Isik, M.Işık, MehmetGasanly, N. M.Korkmaz, F.Department of Electrical & Electronics Engineering2024-07-052024-07-05201400587-42461898-794X10.12693/APhysPolA.126.7472-s2.0-84906971646https://doi.org/10.12693/APhysPolA.126.747https://hdl.handle.net/20.500.14411/150Korkmaz, Filiz/0000-0003-3512-3521; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686;The infrared transmittance and Raman scattering spectra in TlGaxIn1-xS2 (0 <= x <= 1) layered mixed crystals grown by the Bridgman method were studied in the frequency ranges of 400-2000 and 250-400 cm(-1), respectively. The bands observed at room temperature in IR transmittance spectra of TlGaxIn1-xS2 were interpreted in terms of multiphonon absorption processes. The dependences of the frequencies of IR- and Raman-active modes on the composition of TlGaxIn1-xS2 mixed crystals were also established. The structural characterization of the mixed crystals was investigated by means of X-ray diffraction measurements and compositional dependence of lattice parameters was revealed.eninfo:eu-repo/semantics/openAccess[No Keyword Available]ArticleQ41263747750WOS:000342544900019