Işık, MehmetIsik, M.Guler, I.Gasanly, N. M.Department of Electrical & Electronics Engineering2024-07-052024-07-05201330925-34671873-125210.1016/j.optmat.2012.09.0192-s2.0-84871720029https://doi.org/10.1016/j.optmat.2012.09.019https://hdl.handle.net/20.500.14411/266Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals. (c) 2012 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessSemiconductorsOptical propertiesPhotoluminescenceDefect levelsArticleQ2353414418WOS:000314743500015