Qasrawı, Atef Fayez HasanAbusaa,M.Qasrawi,A.F.Asaad,B.M.Khanfar,H.K.Department of Electrical & Electronics Engineering2024-10-062024-10-06202021584-8663[SCOPUS-DOI-BELIRLENECEK-46]2-s2.0-85096129330https://hdl.handle.net/20.500.14411/9524In this study, the effects of Au nanosheets of thicknesses of 50 nm on the structural, electrical and photoelectrical properties of Yb/ZnS/CdS/Au (ZAC-0) devices is considered. Stacked layers of ZnS and CdS which are prepared by the thermal evaporation technique onto Yb substrates under vacuum pressure of 10-5 mbar exhibits rectifying characteristics. For these diodes a reverse to forward current ratios of ~105 at biasing voltage of 0.60 V is determined. Insertion of Au nanosheets between the stacked layers of ZnS and CdS increased the current values by three orders of magnitude and changed the current conduction mechanism from thermionic emission to tunneling under reverse biasing conditions. The ZAC-0 device, exhibit a barrier height lowering and barrier widening upon insertion of Au nanosheets. After the participation of Au nanosheets in the structure of the ZAC-0 devices, large photosensitivity and responsivity accompanied with high external quantum efficiency is observed. The responsivity to 406 nm laser radiation is biasing voltage dependent and reaches 135 mA/W at 0.60 V. The features of the Yb/ZnS/Au/CdS/Au photosensors nominate them as promising candidates for use in light communication technology as signal receivers. © 2020, S.C. Virtual Company of Phisics S.R.L. All rights reserved.eninfo:eu-repo/semantics/closedAccess406 nm laserExternal quantum efficiencyPhotodiodeX-rayZnS/Au/CdSArticleQ4Q31711565572