Qasrawi, A. F.Kayed, T. S.Elsayed, Khaled A.Department of Electrical & Electronics Engineering2024-07-052024-07-05201761386-94771873-175910.1016/j.physe.2016.10.0102-s2.0-84992715390https://doi.org/10.1016/j.physe.2016.10.010https://hdl.handle.net/20.500.14411/2939Qasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166An Al/CdSe/GaSe/C thin film transistor device was prepared by the physical vapor deposition technique at a vacuum pressure of 10(-5) mbar. The x-ray diffraction measurements demonstrated the polycrystalline nature of the surface of the device. The de current-voltage characteristics recorded for the Al/CdSe/C and Al/CdSe/GaSe/C channels displayed a resonant tunneling diode features during the forward and reverse voltage biasing, respectively. In addition, the switching current ratio of the Al/CdSe/C increased from 18.6 to 9.62x10(3) as a result of the GaSe deposition on the CdSe surface. Moreover, the alternating electrical signal analyses in the frequency range of 1.0 MHz to 1.8 GHz, showed some remarkable properties of negative resistance and negative capacitance spectra of the AVCdSe/GaSe/C thin film transistors. Two distinct resonance-antiresonance phenomena in the resistance spectra and one in the capacitance spectra were observed at 0.53, 1.04 and 1.40 GHz for the Al/CdSe/C channel, respectively. The respective resonating peak positions of the resistance spectra shift to 0.38 and 0.95 GHz when GaSe is interfaced with CdSe. These features of the thin film transistors are promising for use in high quality microwave filtering circuits and also for use as ultrafast switches.eninfo:eu-repo/semantics/closedAccessCoatingResonant tunneling diodeUltrafast switchesArticleQ186124128WOS:000390728200017