Qasrawi, A. F.Gasanly, N. M.Department of Electrical & Electronics Engineering2024-07-052024-07-0520091862-630010.1002/pssa.2009250952-s2.0-73049118240https://doi.org/10.1002/pssa.200925095https://hdl.handle.net/20.500.14411/1532Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975In this work, the transport and recombination mechanisms as well as the average hole-relaxation time in TlGaTe2 have been investigated by means of temperature-dependent dark electrical conductivity, photoexcitation intensity-dependent photoconductivity, and Hall effect measurements, respectively. The experimental data analysis revealed the existence of a critical temperature of 150 K. At this temperature, the transport mechanism is disturbed. The dark conductivity data analysis allowed the determination of an energy state of 258 meV The hole-relaxation time that was determined from the Hall mobility data was observed to increase with decreasing temperature. The behavior was attributed to the hole-thermal lattice scattering interactions. At fixed photoexcitation intensity, the photocurrent I-ph decreases with decreasing temperature down to 150 K. Below this temperature it changes direction. The latter data allowed the determination of the recombination center energy as 1 10 meV On the other hand, at fixed temperature and variable illumination intensity, the photocurrent follows the relation I-ph alpha F-n (the value of the exponent, it, decreases with decreasing temperature). (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimeninfo:eu-repo/semantics/closedAccess[No Keyword Available]ArticleQ3Q32061125552558WOS:0002725155000093