Qasrawi, A. F.Gasanly, N. M.Department of Electrical & Electronics Engineering2024-07-052024-07-0520120921-452610.1016/j.physb.2012.04.0202-s2.0-84861345190https://doi.org/10.1016/j.physb.2012.04.020https://hdl.handle.net/20.500.14411/874Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975The temperature effects on the capacitance-voltage characteristics as well as the room temperature capacitance-frequency characteristics of TlGaTe2 crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 mu F to 60 pF was recorded. The capacitance-voltage characteristics, being recorded in the temperature range of 290-380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values ( similar to 10(3)) make the TlGaTe2 crystals applicable in microelectronic components. (C) 2012 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessVaractorTlGaSe2CapacitanceBarrier heightConference Object4071427492752WOS:0003054680000182