Qasrawı, Atef Fayez HasanQasrawi, AFDepartment of Electrical & Electronics EngineeringDepartment of Electrical & Electronics Engineering2024-07-052024-07-052006110268-124210.1088/0268-1242/21/6/0152-s2.0-33646759904https://doi.org/10.1088/0268-1242/21/6/015https://hdl.handle.net/20.500.14411/1196Qasrawi, Atef Fayez/0000-0001-8193-6975The optical properties of amorphous GaSe thin films deposited onto tin oxide (TO) coated glass substrates are presented for the purpose of using this material for the fabrication of metal-semiconductor devices. Specifically, the room temperature direct allowed and forbidden transition energy band gaps of glass/TO and glass/TO/GaSe films are estimated and found to exhibit values of 3.95 and 1.95 eV, respectively. The temperature dependence of the energy band gap of the glass/TO/GaSe is also studied in the temperature range of 295 - 450 K by means of optical transmittance and reflectance spectra. This study allowed the identification of the rate of change of the band gap with temperature as -5.0 x 10(-4) eV K-1 and the 0 K energy band gap as 2.1 eV. The above reported optical parameters of the glass/TO/GaSe structure seem to be suitable for semiconductor device production such as solar cell converters, metal - insulator - semiconductor (MIS), metal-oxide-semiconductor (MOS), MOSFET, etc devices. As an application, we have used the glass/TO/GaSe substrate for fabricating Schottky diodes using Ag and Au point contacts. The diodes are characterized by measuring the current (I) - voltage (V) characteristics at room temperature. The I - V curves exhibit rectifying properties. The I-V data analysis in the Schottky region (below 1.0 V) revealed barrier heights of 0.60 and 0.73 eV for Ag and Au point contacts, respectively.eninfo:eu-repo/semantics/closedAccess[No Keyword Available]ArticleQ3216794798WOS:000238433900017