Alharbi, Seham ReefQasrawı, Atef Fayez HasanQasrawi, Atef FayezDepartment of Electrical & Electronics Engineering2024-07-052024-07-05201921516-14391980-537310.1590/1980-5373-MR-2018-07222-s2.0-85072245075https://doi.org/10.1590/1980-5373-MR-2018-0722https://hdl.handle.net/20.500.14411/2832Qasrawi, Atef Fayez/0000-0001-8193-6975;In this article, the properties of the Ge/Bi2O3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi2O3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the experimental current-voltage characteristics of the Yb/Ge/Bi2O3/C hybrid device structure exhibits electronic switching property. In addition, the capacitance, resistance and microwave cutoff frequency spectral analysis in the frequency domain of 0.01-1.50 GHz revealed a frequency dependent tunability of the device. Moreover, while the Yb/Bi2O3/C interface displays negative capacitance effect, the Yb/Ge/Bi2O3/C interfaces are also found to have the ability of altering the resistance up to three orders of magnitude. Such property allowed reaching a cut off frequency up to 116 GHz. The electronic features of the device indicated that the Ge/Bi2O3 interfaces are attractive for production of negative capacitance field effect transistors and band pass/reject filters.eninfo:eu-repo/semantics/openAccessGe/Bi2O3heterojunctionX-rayelectronic switchmicrowave cavityArticleQ4Q3223WOS:000463875500001